Surface instability and pattern formation by ion-induced erosion and mass redistribution

Hofsäß, H.

doi:10.1007/s00339-013-8170-9

Cited by 53 publications

(41 citation statements)

References 74 publications

(217 reference statements)

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“…Such a conclusion is illustrated in Fig. 36, where the contributions to the curvature coefficients in the HH model from [193] are compared with the prediction from the crater-function (cf) model [133], and from the BH and CV theories. For instance, while the BH+CV or the SDTrimSp-cf analysis do not predict perpendicular ripple formation at any angle, similar to MD-based crater functions [133], the HH analysis does predict perpendicular ripple formation for incidence angles above 70 , as seen in experiments [39].…”

Section: From MD To Continuum Models (Crater Function Approach)mentioning

confidence: 90%

“…36. Quantitative curvature coefficients contributions to the linear dispersion relation in directions parallel, Su, and perpendicular, Sv, to the projection of the ion beam (see Section 5.1 for details) coming from the erosive and redistributive contributions, calculated within the framework of the HH model from [193], the socalled crater function (cf) as in [134], and the BH and CV theories, for Si irradiated by 0.25 keV Ar þ ions for 1 Â 10 12 ions/cm 2 . Negative curvature coefficients are defined as destabilizing.…”

Section: Geometric Methods Based On the Sputtering Yieldmentioning

confidence: 99%

“…Negative curvature coefficients are defined as destabilizing. Reprinted from [193] under a Public Open Access License.…”

Section: Geometric Methods Based On the Sputtering Yieldmentioning

confidence: 99%

“…Working along a similar but alternative approach, additional recent results seem to contradict ion-induced mass redistribution as the dominating contribution to pattern formation [193]. In this work, the crater function philosophy is assumed, but MD simulations are replaced by binary collision Monte Carlo results (as obtained through SDTrimSp [194]), which provide improved statistics.…”

Section: From MD To Continuum Models (Crater Function Approach)mentioning

confidence: 99%

“…In face of the new experimental data in which spurious effects due to contaminants in silicon irradiation are explicitly avoided, see Section 3.1, the basic ingredients that are required in the continuum description of IBS surface nanopatterns have been recently reconsidered [262,58,196,[263][264][265]193]. The goal is to account within a single framework for, at least, the most salient features of the recent experimental picture of the process.…”

Section: Stress-driven Hydrodynamics Of Irradiated Silicon Targetsmentioning

confidence: 99%

See 4 more Smart Citations

Self-organized nanopatterning of silicon surfaces by ion beam sputtering

Muñoz-García

Vázquez

Castro

et al. 2014

Materials Science and Engineering: R: Reports

166

201

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Section: From MD To Continuum Models (Crater Function Approach)mentioning

confidence: 90%

Section: Geometric Methods Based On the Sputtering Yieldmentioning

confidence: 99%

“…Negative curvature coefficients are defined as destabilizing. Reprinted from [193] under a Public Open Access License.…”

Section: Geometric Methods Based On the Sputtering Yieldmentioning

confidence: 99%

Section: From MD To Continuum Models (Crater Function Approach)mentioning

confidence: 99%

Section: Stress-driven Hydrodynamics Of Irradiated Silicon Targetsmentioning

confidence: 99%

See 3 more Smart Citations

Self-organized nanopatterning of silicon surfaces by ion beam sputtering

Muñoz-García

Vázquez

Castro

et al. 2014

Materials Science and Engineering: R: Reports

166

201

View full text Add to dashboard Cite

Model for roughening and ripple instability due to ion-induced mass redistribution [Addendum to H. Hofsäss, Appl. Phys. A 114 (2014) 401, “Surface instability and pattern formation by ion-induced erosion and mass redistribution”]

Hofsäß

2015

Appl. Phys. A

Self Cite

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Carter and Vishnyakov introduced a model (CV model) to describe roughening and ripple instability due to ion-induced mass redistribution. This model is based on the assumption that the irradiated surface layer on a static solid substrate is described by a viscous incompressible thin film bound to the substrate by a ''no slip'' and ''no transport'' kinematic boundary condition, i.e. similar to a thin film of viscous paint. However, this boundary condition is incomplete for a layer under ion irradiation. The boundary condition must allow exchange of atoms between the substrate and the irradiated film, so that the thickness of the film is always determined by the size of the collision cascade, independent of the evolution of the surface height profile. In addition, the film thickness depends on the local ion incidence angle, which leads to a time dependence of the film thickness at a given position. The equation of motion of the surface and interface profiles for these boundary conditions is introduced, and a new curvature-dependent coefficient is found which is absent in the CV model. This curvature coefficient depends on the angular derivative of the layer thickness and the atomic drift velocity at the film surface induced by recoil events. Such a stabilizing curvature coefficient was introduced in Appl. Phys. A 114 (2014) 401 and is most pronounced at intermediate angles.

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Interfacial phase-change and geometry modify nanoscale pattern formation in irradiated thin films

Evans,

Norris

2024

J Eng Math

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In this paper, we consider the linear stability of ion-irradiated thin films where the typical no-penetration boundary condition has been relaxed to a phasechange or mass-conservation boundary condition. This results in the modification of the bulk velocity field by the density jump across the amorphous-crystalline interface as new material enters the film and instantaneously changes volume. In other physical systems, phase change at a moving boundary is known to affect linear stability, but such an effect has not yet been considered in the context of continuum models of ion-induced nanopatterning. We also determine simple closed-form expressions for the amorphous-crystalline interface in terms of the free interface, appealing directly to the physics of the collision cascade, which was recently shown to strongly modify the critical angle at which pattern formation is predicted to begin on an irradiated target. We find that phasechange at the amorphous-crystalline boundary imparts a strong ion-, targetand energy-dependence and, alongside a precise description of the interfacial geometry, may contribute to a unified, predictive, continuum-type model of ioninduced nanopatterning valid across a wide range of systems. In particular, we consider argon-irradiated silicon, where the presence of phase-change at the amorphous-crystalline interface appears to predict an experimentally-observed, strong suppression of pattern formation near 1.2keV for that system.

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Surface instability and pattern formation by ion-induced erosion and mass redistribution

Cited by 53 publications

References 74 publications

Self-organized nanopatterning of silicon surfaces by ion beam sputtering

Self-organized nanopatterning of silicon surfaces by ion beam sputtering

Model for roughening and ripple instability due to ion-induced mass redistribution [Addendum to H. Hofsäss, Appl. Phys. A 114 (2014) 401, “Surface instability and pattern formation by ion-induced erosion and mass redistribution”]

Interfacial phase-change and geometry modify nanoscale pattern formation in irradiated thin films

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