Development of a robust photocathode using low-cost and
high-performing
materials, e.g., p-Si, to produce clean fuel hydrogen has remained
challenging since the semiconductor substrate is easily susceptible
to (photo)corrosion under photoelectrochemical (PEC) operational conditions.
A protective layer over the substrate to simultaneously provide corrosion
resistance and maintain efficient charge transfer across the device
is therefore needed. To this end, in the present work, we utilized
pulsed laser deposition (PLD) to prepare a high-quality SrTiO3 (STO) layer to passivate the p-Si substrate using a buffer
layer of reduced graphene oxide (rGO). Specifically, a very thin (3.9
nm ∼10 unit cells) STO layer epitaxially overgrown on rGO-buffered
Si showed the highest onset potential (0.326 V vs RHE) in comparison
to the counterparts with thicker and/or nonepitaxial STO. The photovoltage,
flat-band potential, and electrochemical impedance spectroscopy measurements
revealed that the epitaxial photocathode was more beneficial for charge
separation, charge transfer, and targeted redox reaction than the
nonepitaxial one. The STO/rGO/Si with a smooth and highly epitaxial
STO layer outperforming the directly contacted STO/Si with a textured
and polycrystalline STO layer showed the importance of having a well-defined
passivation layer. In addition, the numerous pinholes formed in the
directly contacted STO/Si led to the rapid degradation of the photocathode
during the PEC measurements. The stability tests demonstrated the
soundness of the epitaxial STO layer in passivating Si against corrosion.
This study provided a facile approach for preparing a robust protection
layer over a photoelectrode substrate in realizing an efficient and,
at the same time, durable PEC device.