The samples of Ga doped Cr 2 O 3 oxide have been prepared using chemical co-precipitation route.X-ray diffraction pattern and Raman spectra have confirmed rhombohedral crystal structure with space group R3 C. Magnetic measurement has indicated the dilution of antiferromagnetic (AFM) spin order in Ga doped α-Cr 2 O 3 system oxide, where the AFM transition temperature of bulk α-Cr 2 O 3 oxide at about 320 K has been suppressed and ferrimagnetic behavior is observed from the analysis of the temperature dependence of magnetization data below 350 K. Apart from Ga doping effect, the spin freezing (50 K-70 K) and superparamagnetic behavior of the surface spins at lower temperatures, typically below 50 K, have been exhibited due to nano-sized grains of the samples. All the samples showed non-linear current-voltage (I-V) characteristics. However, I-V characteristics of the Ga doped samples are remarkably different from α-Cr 2 O 3 sample. The I-V curves of Ga doped samples have exhibited many unique electronic properties, e.g., bi-stable (low resistance-LR and high resistance-HR) electronic states and negative differential resistance (NDR). Optical absorption spectra revealed three electronic transitions in the samples associated with band gap energy at about 2.67-2.81 eV, 1.91-2.11 eV, 1.28-1.35 eV, respectively. 2 Key Words: Magnetic semiconductor; tuning of band gap; negative differential resistance; I-V loop, bi-stable electronic state.