Surface mobility in silicon at large operating temperature

Abstract

In this paper, an experimental investigation on high-temperature carrier mobili t y in silicon inversion layers is carried o u t w i t h the aim of improving our understanding of car-

On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs

“…Within the cylindrical structure, the total charge is twice as large as that of a DG structure, and, for low gate voltages, electrons distribute farther from the interface leading to an enhanced mobility. The mobility model of [9] has been implemented in our DD solver.…”

Effect of Temperature on Silicon Carriers Mobilities Using MATLAB

“…The conductivity of a semiconductor is directly proportional to the product of carrier concentration and carrier mobility. Whenever all the things are equal, higher mobility leads to better device performance [3]. Carrier bounces around and regularly changes direction and velocity in the semiconductor because of the scattering.…”

“…The typical drift velocity in the semiconductor is less than a typical thermal velocity which is a round 10 +7 cm/s at room temperature. The carrier motion is shown in the Figure 1 when the electric fields are applied or without it in the semiconductor [3]. The carrier motions are occurred randomly and quickly through the semiconductor when the electric field is not applied, otherwise a small difference when the electric field applied there is a net motion along the field.…”

“…The carrier motions are occurred randomly and quickly through the semiconductor when the electric field is not applied, otherwise a small difference when the electric field applied there is a net motion along the field. By the analyzation of the net movement of the carrier motion according to the Newton's second law, the applied force is proportional to the acceleration of the carrier [3]:…”