2014
DOI: 10.2109/jcersj2.122.822
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Surface modification of carbon nanofibers with SiC by heating different SiO vapor sources in argon atmosphere

Abstract: In order to improve interfacial bonding strength between carbon nanofibers (CNFs) and SiC matrix in CNFs/SiC composites and to disperse CNFs uniformly in the matrix, SiC coating on surface of CNFs was performed in argon atmosphere in the temperature range of 1400 to 1800°C using SiO 2 , SiO, and mixture of Si and SiO 2 powders (Si/SiO 2 powder) as silicon sources, and the modification and dispersibility of the treated CNFs were investigated. ¢-SiC particles were deposited on the surface of the CNFs in all the … Show more

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Cited by 5 publications
(6 citation statements)
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“…Their XRD patterns are shown in the previous paper. 5) SiC deposited on the CNFs using SiO 2 were less than that deposited on the CNFs using other silicon sources, particularly the SiC deposited on the CNFs using SiO 2 at 1400°C were very little. Nevertheless, the SiC-coated CNFs prepared using SiO 2 at 1400, 1600 and 1800°C were used in this study because the CNFs had a fewer defects.…”
Section: Experimental Procedures 21 Sic-coated Cnfsmentioning
confidence: 90%
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“…Their XRD patterns are shown in the previous paper. 5) SiC deposited on the CNFs using SiO 2 were less than that deposited on the CNFs using other silicon sources, particularly the SiC deposited on the CNFs using SiO 2 at 1400°C were very little. Nevertheless, the SiC-coated CNFs prepared using SiO 2 at 1400, 1600 and 1800°C were used in this study because the CNFs had a fewer defects.…”
Section: Experimental Procedures 21 Sic-coated Cnfsmentioning
confidence: 90%
“…The dispersibility of CNFs became higher in the water of pH = 10 with an increase in amount of SiC coating on CNFs. 5) So the dispersibility of the SiCcoated CNFs, particularly the 1800-coated CNFs, were superior to that of the non-coated CNFs. Therefore, the 1800-coated CNFs could be dispersed more uniformly in SiC matrix and so the SiC matrix was densified more uniformly and the grain growth of SiC also progressed more uniformly at lower temperatures of 20502100°C, as shown in Figs.…”
Section: Densification and Microstructure Developmentmentioning
confidence: 94%
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