Surface modification of ZnO with WO3 overlayer for enhanced hydrogen sensing

Karthick, K.; Vijayalakshmi, K.

doi:10.1007/s10854-015-3352-1

Cited by 2 publications

(1 citation statement)

References 26 publications

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“…In particular, the broader light absorption range and restrained carrier recombination are key advantages for the improvement of PEC H 2 generation . Nevertheless, up to date ZnO‐Fe 2 O 3 and ZnO‐WO 3 composites have been mainly used for gas sensing and photocatalytic pollutant degradation, whereas only a few reports have been dedicated to their applications in PEC water splitting . These observations highlight the urgent need of viable preparation routes to supported ZnO‐Fe 2 O 3 and ZnO‐WO 3 nanosystems, allowing a fine control over their morphology and interface structure …”

Section: Introductionmentioning

confidence: 99%

Vapor Phase Fabrication of Nanoheterostructures Based on ZnO for Photoelectrochemical Water Splitting

Barreca

Carraro

Gasparotto

et al. 2017

Adv Materials Inter

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especially in nanostructured forms in order to attain improved system performances. [11,20,26,32] In this regard, ZnO, a transparent semiconducting oxide with a large exciton binding energy (60 meV) and high carrier mobility, has attracted an extensive interest. [5,15,18,[32][33][34] Nevertheless, its performances are detrimentally affected by its wide band gap (E G = 3.3 eV), [3,14,[35][36][37][38][39] limiting radiation absorption to the UV interval (≈5% of the overall solar spectrum), [1,2,38,[40][41][42][43] and by the rapid charge carriers recombination. [33,[35][36][37]44] To tackle these obstacles and extend the system photo response into the vis range, [1,15,39] various investigators have focused on doping with substitutional elements to the Zn and O sites. [3,21,32,40,41,43] Appreciable efforts have also been devoted to the coupling of ZnO with other suitable semiconductors, with the aim of tailoring their interfacial energetics to the targeted photoactivated processes. [2,22,27,36,45,46] In this regard, various heterojunctioncontaining composites based on ZnO-TiO 2 , [8] ZnO-NiO, [31] ZnOCdS, [11] ZnO-CdSe, [34] ZnO-CdTe, [43] ZnO-M(OH) x with M = Co, Ni, [16] ZnO-BiVO 4 , [42] ZnO-WO x coupled with CdSe-CdS, [45] ZnO-ZnS-FeS 2 , [39] and ZnO-CdS-NiO [17] have been developed and tested for solar-driven H 2 O splitting. In this broad scenario, an attractive option involves the use of Fe 2 O 3 and WO 3 as functional activators of ZnO systems for the fabrication of vis-light absorbing photoanodes. In particular, Fe 2 O 3 , an abundant and cheap oxide with a narrow band gap (E G = 2.2 eV), [9,26,28,35] has gained a considerable attention, but its sluggish oxygen evolution kinetics, low carrier lifetime, and short exciton diffusion

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Section: Introductionmentioning

confidence: 99%

Vapor Phase Fabrication of Nanoheterostructures Based on ZnO for Photoelectrochemical Water Splitting

Barreca

Carraro

Gasparotto

et al. 2017

Adv Materials Inter

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INFLUENCE OF SURFACE MODIFICATION ON PHYSICOCHEMICAL PROPERTIES OF ZnO THIN FILMS AND NANOSTRUCTURES: A REVIEW

Xian

2018

Surf. Rev. Lett.

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The surface modification plays an important role on both physical and chemical properties of zinc oxide (ZnO) materials. In this review paper, efforts are made to summarize and analyze reported results regarding surface modification method, surface modification effect on the luminescence and superhydrophobic properties of ZnO thin films and nanostructures. Furthermore, the photocatalytic activity and gas sensor property of modified ZnO using both organic and inorganic species are also involved.

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Surface modification of ZnO with WO3 overlayer for enhanced hydrogen sensing

Cited by 2 publications

References 26 publications

Vapor Phase Fabrication of Nanoheterostructures Based on ZnO for Photoelectrochemical Water Splitting

Vapor Phase Fabrication of Nanoheterostructures Based on ZnO for Photoelectrochemical Water Splitting

INFLUENCE OF SURFACE MODIFICATION ON PHYSICOCHEMICAL PROPERTIES OF ZnO THIN FILMS AND NANOSTRUCTURES: A REVIEW

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