Surface modifications induced by bismuth on (001) GaAs surfaces

Jiang, Weilin; Liu, J.Q.; So, Mo Geun; Myrtle, K.; Kavanagh, K. L.; Watkins, Simon P.

doi:10.1016/j.jcrysgro.2005.01.060

Cited by 16 publications

(13 citation statements)

References 15 publications

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“…It should be noted that islands are rich of Bi metal. The origin of the Bi island formation has been discussed by many authors [4,10]. Indeed, similar observations were reported in case of LP-MOVPE of InAsBi [12] if the growth conditions are not appropriate.…”

Section: Resultssupporting

confidence: 67%

AP-MOVPE of thin GaAs1−xBix alloys

Fitouri

Moussa

Rebey

et al. 2006

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 67%

AP-MOVPE of thin GaAs1−xBix alloys

Fitouri

Moussa

Rebey

et al. 2006

Journal of Crystal Growth

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“…Except for Bi atoms, trimethylbismuth (TMBi) is also used as surfactant in GaAs and InAs QDs growth by MOCVD [119]. Bismuth islands will be formed when the surface is covered with more than 1 ML Bi controled by the flux of TMBi vapor.…”

Section: Surfactant Effectmentioning

confidence: 99%

“…The stability of the Bi covered surface is strongly affected by temperature. When temperature is below 500 • C, the Bi covered surface remains stable, however, when the temperature exceeds 550 • C [119], Bi atoms desorb rapidly. Beside TMBi vapor and temperature, substrate orientation also affects the distribution of formed Bi islands.…”

Section: Surfactant Effectmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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“…This behaviour limits the efficiency of these materials and needs to be understood. During the last few years, there have been several reports on the bismuth deposition on Si (1 0 0) [9] and GaAs (1 0 0) [10]. On the other hand, Wixom et al [11] have studied the bismuth effect on the homoepitaxy of GaAs and found that bismuth enhance the (1 1 0) lateral growth rate and have a negligible effect on the lateral growth rate in the orthogonal direction.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, Wixom et al [11] have studied the bismuth effect on the homoepitaxy of GaAs and found that bismuth enhance the (1 1 0) lateral growth rate and have a negligible effect on the lateral growth rate in the orthogonal direction. More recently, optical in situ techniques such as reflection difference spectroscopy (RDS) [10,12] and surface photo-absorption (SPA) [13] annealing or/and epitaxy of GaAs (1 0 0). To our knowledge there is no report on the surface modifications induced by bismuth on high index GaAs surfaces.…”

Section: Introductionmentioning

confidence: 99%