Two-dimensional (2D)
MoS
2
is a promising material for
future electronic and optoelectronic applications. 2D MoS
2
devices have been shown to perform reliably under irradiation conditions
relevant for a low Earth orbit. However, a systematic investigation
of the stability of 2D MoS
2
crystals under high-dose gamma
irradiation is still missing. In this work, absorbed doses of up to
1000 kGy are administered to 2D MoS
2
. Radiation damage
is monitored via optical microscopy and Raman, photoluminescence,
and X-ray photoelectron spectroscopy techniques. After irradiation
with 500 kGy dose, p-doping of the monolayer MoS
2
is observed
and attributed to the adsorption of O
2
onto created vacancies.
Extensive oxidation of the MoS
2
crystal is attributed to
reactions involving the products of adsorbate radiolysis. Edge-selective
radiolytic etching of the uppermost layer in 2D MoS
2
is
attributed to the high reactivity of active edge sites. After irradiation
with 1000 kGy, the monolayer MoS
2
crystals appear to be
completely etched. This holistic study reveals the previously unreported
effects of high-dose gamma irradiation on the physical and chemical
properties of 2D MoS
2
. Consequently, it demonstrates that
radiation shielding, adsorbate concentrations, and required device
lifetimes must be carefully considered, if devices incorporating 2D
MoS
2
are intended for use in high-dose radiation environments.