Surface morphology and growth rate variation of InP on patterned substrates using tertiarybutylphosphine

Xu, Xiangang; Giesen, C.; Hövel, R.; Heuken, M.; Heime, K.

doi:10.1016/s0022-0248(98)00140-7

Cited by 6 publications

(3 citation statements)

References 17 publications

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“…[37,38]) or for buried heterostructure devices (e.g. [39][40][41][42][43]). In general, rectangular profiles are fabricated via reactive ion etching (RIE) which introduces the issue of crystallographic damage of the material in proximity to the etched surface [44,45].…”

Section: Overgrowth Of Rectangular-patterned Surfacesmentioning

confidence: 99%

Overgrowth of submicron-patterned surfaces for buried index contrast devices

Koontz

Petrich

Kolodziejski

et al. 2000

Semicond. Sci. Technol.

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In a wide variety of optoelectronic and photonic devices, a modulation of the refractive index is required. To increase device design flexibility, the index modulation may reside within the various layers of the device, and hence fabrication of the device will require subsequent overgrowth of the corrugation. The overgrowth of submicron-patterned surfaces (or gratings) for buried index contrast devices is reviewed. The material systems considered are (In, Ga)As on GaAs patterned substrates and the InGaAsP quaternary system on InP patterned substrates, as well as the associated inverted structure. The corrugation is typically a sawtooth-patterned surface or a rectangular-patterned surface having a relatively shallow depth (of the order of 100 nm). For sawtooth-patterned surface overgrowth, mass transport-induced alteration of the grating profile promotes the overgrowth of high crystalline quality material and also reduces compositional modulation of the overlayer. In contrast, for rectangular-patterned surface overgrowth, grating preservation provides the requisite (100)-oriented crystallographic planes such that compositional modulation is minimized. Furthermore, for closely lattice-matched conditions, the materials within the rectangular-patterned grating region experience an orthorhombic strain in order to elastically accommodate the lattice mismatch.

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Section: Overgrowth Of Rectangular-patterned Surfacesmentioning

confidence: 99%

Overgrowth of submicron-patterned surfaces for buried index contrast devices

Koontz

Petrich

Kolodziejski

et al. 2000

Semicond. Sci. Technol.

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“…Group III-V (13-15) compound semiconductors have attracted considerable interest owing to their significant value in fundamental researches and technical applications, including quantum size effects, 1,2 electronic and optoelectronic devices, 3-5 which promote researchers to pursue effective methods and chemical reactions for preparing this kind of materials. 6-21 Among the III-V semiconductors, much attention has been paid to the preparation of GaP, InP and their alloys through various chemical approaches, such as the traditional direct reactions of elements in the solid state at high temperature 6 or its variation in organic solution phase at relative low temperature, 7 precursor metathesis reactions in solid state or solution phase, 8, 9 the organometallic routes in both gas-phase and solution phase, including metal organic chemical vapour deposition (MOCVD), 10,11 metal organic vapor phase epitaxy (MOVPE) 12,13 and pyrolysis of single-source organometallic precursors, 14, 15 and dehalosilylation and related reactions. [16][17][18][19][20][21] It is interesting to note that the development of preparative methods for III-V phosphides is, in general, a process which explores suitable phosphorus sources.…”

Section: Introductionmentioning

confidence: 99%

“…8, 9 Phosphine and trialkylphosphine such as PH 3 and P t Bu 3 are usually used in the organometallic routes to III-V phosphides. [10][11][12][13][14][15]22 Recently, an attractive phosphorus source, tris(trimethylsilyl)phosphine (P(SiMe 3 ) 3 ), has intensively been present in the controlled synthesis of nanoscale III-V phosphides, and the dehalosilylation and related reactions are proposed. 16-21 Meanwhile, trioctylphosphine (P(C 8 H 17 ) 3 , TOP), which is often used as a surfactant or capping agent in the size and shape control of nanocrystals, [17][18][19]23 has been employed as a phosphorus precursor to synthesize InP and other metal phosphide nanocrystals.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of InP nanofibers from tri(m-tolyl)phosphine: an alternative route to metal phosphidenanostructures

et al. 2010

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The synthesis of InP nanofibers via a new Ullmann-type reaction of indium nanoparticles with tri(m-tolyl)phosphine (P(PhMe)(3)) was typically performed to illustrate an alternative route for the preparation of nanostructured metal phosphides, including III-V (13-15) and transition-metal phosphides. Triarlyphosphine compounds such as other two tri(m-tolyl)phosphine isomers, diphenyl(p-tolyl)phosphine, and triphenylphosphine were comparably employed to synthesize InP nanocrystals. From the aspect of the carbonization of triarlyphosphines, Raman spectroscopy and thermo-gravimetric analysis (TGA) investigations of the InP products showed that the stability of these triarlyphosphines conformed to the order of tri(p-tolyl)phosphine approximately tri(o-tolyl)phosphine < diphenyl(p-tolyl)phosphine < tri(m-tolyl)phosphine < triphenylphosphine. The correlation between the stability of triarlyphosphines and the growth of InP nanocrystals was investigated, and experimental results showed that the relatively stable triarlyphosphines (tri(m-tolyl)phosphine and triphenylphosphine) were favorable for the preparation of one-dimensional (1D) InP nanostructures (nanofibers and nanowires). The reactivity (stability) of triarlyphosphines was also compared with those of P(SiMe(3))(3) (typically see: J. M. Nedeljković, O. I. Mićić, S. P. Ahrenkiel, A. Miedaner and A. J. Nozik, J. Am. Chem. Soc., 2004, 126, 2632) and P(C(8)H(17))(3) (C. Qian, F. Kim, L. Ma, F. Tsui, P. D. Yang and J. Liu, J. Am. Chem. Soc., 2004, 126, 1195) according to the difference in preparative temperature for phosphide synthesis. Raman and photoluminescence properties of the as-synthesized InP nanocrystals were further studied, and the synthetic mechanism of our method was reasonably investigated by GC-MS analysis. Moreover, the current route was successfully extended to prepare GaP, MnP, CoP and Pd(5)P(2) nanocrystals.

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