Surface morphology and luminescence characterization of β-FeSi2 thin films prepared by pulsed laser deposition

Hossain, Mohammad Zakir; Mimura, T.; Miura, N.; Uekusa, S.

doi:10.1016/j.apsusc.2009.05.072

Cited by 9 publications

(5 citation statements)

References 17 publications

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“…The investigation of the epitaxial growth and the crystalline properties of the thin films are essential of the �-FeSi2 films for the application in solar energy and optical fiber communications. In these aspects we have carried out the XRD [7] shown in our previous study. Therefore we have confirmed the epitaxial growth was investigated in �-FeSi2 films.…”

Section: Resultsmentioning

confidence: 99%

“…The annealing temperature was 900 DC. In our previous study, we have investigated the phase condition and epitaxial growth by X-ray diffraction method [7,8]. In this study we have carried out the cross sectional TEM and electron diffraction (ED) to investigate the crystalline effect of the �-FeSiz thin film using two types target.…”

Section: Methodsmentioning

confidence: 99%

“…We systematically showed the results previously in different publications [6,7]. In this manuscript, we will show the recent experimental results and research development of the �-FeSiz film.…”

Section: Introductionmentioning

confidence: 91%

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The crystalline effect of the of the β-FeSi<inf>2</inf> film using two types target prepared by pulsed laser deposition

Hossain

Katsumata

Uekusa

2010

International Conference on Electrical &Amp; Computer Engineering (ICECE 2010)

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Ecological friendly semiconducting silicide I3-FeSiz thin film has been formed on FZ-Si (111) substrates using sintering FeSiz (purity 99.99%) and electrolytic Fe (purity 99.99%) targets by pulsed laser deposition (PLD) method in an ArF (A.= 193 nm) excimer laser. Subsequently the prepared thin films were annealed at 900°C. Cross sectional transmission electron microscope (TEM) results confirmed that the epitaxial growth of the I3-FeSiz on the thin films and the crystalline structure was improved after increasing the annealing time 5 to 20 hrs ranges in both process. It was also showed the poly crystalline structure and the thicknesses of the thin films were 80 to tOO nm for FeSiz target and 200 to 250nm for Fe target. The TEM result was also confirmed by electron diffraction (ED) method. The intrinsic photoluminescence (PL) intensity of the A-band peak from 20 hrs annealed sample was investigated. We report an application of the thin film with crystalline effect, luminescence characteristics and band structure condition to apply in solar cell and optical fiber communications.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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The crystalline effect of the of the β-FeSi<inf>2</inf> film using two types target prepared by pulsed laser deposition

Hossain

Katsumata

Uekusa

2010

International Conference on Electrical &Amp; Computer Engineering (ICECE 2010)

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“…[1][2][3] Its chemical composition consists of nontoxic elements (Si and Fe), which exist in great abundance on Earth. [4][5][6] The compound has a direct optical band gap of 0.85 eV above the indirect band gap of 0.76 eV, 7,8) corresponding to the wavelength of an optical fiber for telecommunication. Moreover, its large optical absorption coefficient is greater than 10 5 cm −1 .…”

Section: Introductionmentioning

confidence: 99%

Carrier transportation properties and series resistance of n-type β-FeSi₂/p-type Si heterojunctions fabricated by RF magnetron sputtering

Nopparuchikun¹,

Promros²,

Teakchaicum³

et al. 2017

Jpn. J. Appl. Phys.

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Heterojunctions composed of n-type β-FeSi 2 thin films and p-type Si(111) substrates were formed by radio frequency magnetron sputtering at an Ar pressure of 2.66 ' 10 %1 Pa at a substrate temperature of 560 °C. The current density-voltage (J-V ) curves of the heterojunctions measured in the dark and under illumination at room temperature showed a large leakage current under reverse bias conditions and a weak response to nearinfrared (NIR) light irradiation. From the results of the analysis of dark forward J-V curves, the dominant carrier transport mechanisms at V : 0.15 V and V > 0.15 V were considered a recombination process and a space-charge-limited current process, respectively. Both capacitance-voltage and conductance-voltage characteristics at room temperature were measured and analyzed as a function of applied frequency ( f ) ranging from 20 kHz to 2 MHz in order to estimate the series resistance (R s ) by the Nicollian-Brews method. R s was estimated as 77.79 Ω at 20 kHz. It decreased to 14.16 Ω at 2 MHz, which is expected because the charges at the interface states cannot follow the AC signal at high f values.

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“…It has been reported that -FeSi 2 can be epitaxially grown on Si with 2-5% lattice mismatches [4]. Furthermore, its composition consists of nontoxic elements (Fe and Si) [5]. More importantly, it possesses high optical absorption coefficients (greater than 10 5 cm −1 at photon energies above 1.5 eV) [6,7] and a direct band gap of 0.85 eV corresponding to an optical telecommunication wavelength in the spectral range of near-infrared (NIR) [8,9].…”

Section: Introductionmentioning

confidence: 99%

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi₂ Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

Sittimart

Nopparuchikun

Promros

2017

Advances in Materials Science and Engineering

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In this study, n-type -FeSi 2 /p-type Si heterojunctions, inside which n-type -FeSi 2 films were epitaxially grown on p-type Si(111) substrates, were created using radio frequency magnetron sputtering at a substrate temperature of 560 ∘ C and Ar pressure of 2.66 × 10 −1 Pa. The heterojunctions were measured for forward and reverse dark current density-voltage curves as a function of temperature ranging from 300 down to 20 K for computation of heterojunction parameters using the thermionic emission (TE) theory and Cheung's and Norde's methods. Computation using the TE theory showed that the values of ideality factor ( ) were 1.71 at 300 K and 16.83 at 20 K, while the barrier height ( ) values were 0.59 eV at 300 K and 0.06 eV at 20 K. Both of the and values computed using the TE theory were in agreement with those computed using Cheung's and Norde's methods. The values of series resistance ( ) computed at 300 K and 20 K by Norde's method were 10.93 Ω and 0.15 MΩ, respectively, which agreed with the values found through computation by Cheung's method. The dramatic increment of value at low temperatures was likely attributable to the increment of value at low temperatures.

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Surface morphology and luminescence characterization of β-FeSi2 thin films prepared by pulsed laser deposition

Cited by 9 publications

References 17 publications

The crystalline effect of the of the β-FeSi<inf>2</inf> film using two types target prepared by pulsed laser deposition

The crystalline effect of the of the β-FeSi<inf>2</inf> film using two types target prepared by pulsed laser deposition

Carrier transportation properties and series resistance of n-type β-FeSi₂/p-type Si heterojunctions fabricated by RF magnetron sputtering

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi₂ Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

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Surface morphology and luminescence characterization of β-FeSi2 thin films prepared by pulsed laser deposition

Cited by 9 publications

References 17 publications

The crystalline effect of the of the &#x03B2;-FeSi<inf>2</inf> film using two types target prepared by pulsed laser deposition

The crystalline effect of the of the &#x03B2;-FeSi<inf>2</inf> film using two types target prepared by pulsed laser deposition

Carrier transportation properties and series resistance of n-type β-FeSi2/p-type Si heterojunctions fabricated by RF magnetron sputtering

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

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The crystalline effect of the of the β-FeSi<inf>2</inf> film using two types target prepared by pulsed laser deposition

The crystalline effect of the of the β-FeSi<inf>2</inf> film using two types target prepared by pulsed laser deposition

Carrier transportation properties and series resistance of n-type β-FeSi₂/p-type Si heterojunctions fabricated by RF magnetron sputtering

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi₂ Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering