Surface morphology evolution and underlying defects in homoepitaxial growth of GaAs (110)

Kim, Han Sung; Yeu, In Won; Han, Gyuseung; Ju, Gunwu; Lee, Yun Joong; Shin, Y.; Choi, Jung‐Hae; Koo, Hyun Cheol

doi:10.1016/j.jallcom.2021.159848

Journal of Alloys and Compounds

2021

DOI: 10.1016/j.jallcom.2021.159848

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Surface morphology evolution and underlying defects in homoepitaxial growth of GaAs (110)

Han Sung Kim

In Won Yeu

Gyuseung Han

et al.

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Cited by 2 publications

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Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor

Jarosz,

Stachowicz,

Krzeminski

et al. 2023

ACS Omega

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The molecular beam epitaxy (MBE) technique is renowned as the most suitable for the growth of high-quality crystalline materials and nanostructures such as GaAs. However, once established, optimal growth parameters required for repeatability of top-quality structures may be easily lost as MBE is highly sensitive to any changes in the system. Especially, routine servicing procedures, which include any activity which requires unsealing of the growth chamber, are devastating for developed growth parameters and force the necessity of recalibration. In this work, we present the process of growth parameter pre-optimization for obtaining homoepitaxial GaAs layers after servicing and restarting the MBE system. Namely, we present how each step of reestablishing optimal growth condition influences various characteristics of obtained GaAs layers. Those include in situ, structural, and spectral measurement techniques. An additional aspect was to compare the optimal conditions for the growth of homoepitaxial GaAs layers from two growth campaigns in which the main difference is the addition of an ion pump and increasing the temperature gradient on the Ga cell.

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Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor

Jarosz,

Stachowicz,

Krzeminski

et al. 2023

ACS Omega

View full text Add to dashboard Cite

show abstract

Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature

et al. 2021

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We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τPL), and electron spin relaxation times (τs) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature Tg (430–600 °C) and a high V/III flux ratio using As2. At 530 °C < Tg < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in τPL~40 ns at RT, one order of magnitude longer than those reported so far. Long τs (~6 ns) is also observed at RT.

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Surface morphology evolution and underlying defects in homoepitaxial growth of GaAs (110)

Cited by 2 publications

References 48 publications

Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor

Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor

Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature

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