Surface morphology improvement by diethylzinc doping on metamorphic InAs on GaAs using MOVPE

Arai, Masakazu; Nakagawa, Shota; Hombu, Koki; Hirata, Yasushi; Maeda, Koji

doi:10.1016/j.jcrysgro.2023.127274

Cited by 1 publication

(2 citation statements)

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“…However, these substrates are expensive, and their crystal quality is inferior to that of GaAs. Therefore, many studies [11][12][13][14][15][16][17] have experimented with growing InAs on GaAs substrates using techniques such as two-step growth, [14,15] use of grad buffer layers, [16] and introduction of surfactants. [17] In addition, experiments have been conducted to grow InAsSb directly on GaAs substrates [18][19][20] and InAs on Si substrates.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, many studies [11][12][13][14][15][16][17] have experimented with growing InAs on GaAs substrates using techniques such as two-step growth, [14,15] use of grad buffer layers, [16] and introduction of surfactants. [17] In addition, experiments have been conducted to grow InAsSb directly on GaAs substrates [18][19][20] and InAs on Si substrates. [21] Type-I InAsSb superlattices have been grown on GaSb and InAs substrates using various combinations of AlInAs, [22,23] InGaAs, [24,25] and InAsP [26][27][28] barriers.…”

Section: Introductionmentioning

confidence: 99%

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Metal Organic Vapor‐Phase Epitaxy Growth of Multilayer Stacked InAsSb/InAsP Superlattices on GaAs and InAs Substrate

Hombu,

Hikita,

Fujisawa

et al. 2024

Physica Status Solidi (a)

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Midinfrared photonic devices are used as lasers and photodetectors in optical gas sensors and fiber‐optic communications. Herein, the pair number dependence and strain compensation dependence of the InAsSb/InAsP superlattice structure to increase luminescence intensity and reduce crystal defects is investigated. InAs substrates are used to demonstrate various effects of strain compensation, including its role in increasing luminescence intensity and improving the surface flatness. Furthermore, the photoluminescence spectra of a grown superlattice between the InAs substrate and GaAs substrate with two‐temperature‐step growth are shown.

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