Surface nanosheets evolution and enhanced photoluminescence properties of Al-doped ZnO films induced by excessive doping concentration

Li, Jitao; Zhu, Xinghua; Xie, Qingshuang; Yang, Dingyu

doi:10.1016/j.ceramint.2018.11.059

Cited by 37 publications

(5 citation statements)

References 36 publications

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“…For such devices, that is important to obtain high-quality functional elements, for instance, buffer and window films for solar cells; n-type leg for thermoelectric generators; sensitive elements for sensors. For this purpose, ZnO is an important semiconducting material possessing suitable physicochemical properties [7][8][9][10][11]. It should be noted that to carry out 2D printing, there is a need to create functional nanoinks that might be obtained by the formation of printing the suspension of nanomaterials.…”

Section: Introductionmentioning

confidence: 99%

Influence of the thermal annealing on the morphological and structural properties of ZnO films deposited onto polyimide substrates by ink-jet printing

et al. 2020

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In this work, ZnO films were deposited onto flexible polyimide substrates by ink-jet printing nanoinks containing polyolsynthesized nanocrystals. ZnO films were annealed at 200-400 °C for 10 min and 60 min under the ambient atmosphere. The morphological (shape, size, size distribution, surface roughness), structural (phase composition, crystal structure), optical (band gap, transmission coefficients) properties and the chemical composition of the synthesized nanocrystals and the obtained films were studied. X-ray diffraction analysis, transmission and scanning electron microscopies, atomic force microscopy, Fourier-transform infrared (FTIR) and optical spectroscopies, and energy-dispersive X-ray spectroscopy (EDS) were used to study the properties of obtained ZnO materials. The films, annealed at T a = 400 °C for t a = 60 min, and nanocrystals, synthesized for t g = 120 min, have the good fundamental characteristics for application in the microelectronic devices, especially in solar cells and thermoelectric generators.

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Section: Introductionmentioning

confidence: 99%

Influence of the thermal annealing on the morphological and structural properties of ZnO films deposited onto polyimide substrates by ink-jet printing

et al. 2020

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“…According to XRD results, ZnO thin films are preferentially grown in a wurtzite hexagonal crystal system without any other crystal phases. ree well-defined ZnO peaks have been seen, displayed as the (10-10), (0002), and (10)(11) peaks showing the ZnO polycrystalline wurtzite structure. As can be seen, all the samples are oriented in the dominant (0002) direction.…”

Section: Resultsmentioning

confidence: 94%

“…Zinc oxide (ZnO), which is one of the most studied transparent conductive oxide (TCO), is a wide bandgap semiconductor material with a 3.37 eV bandgap value and a large exciton binding energy of 60 meV [1,2]. ZnO material has a huge potential for both electronic and optoelectronic applications such as light-emitting diodes (LED), solar cells, transistors, gas sensing, and UV-photodetectors (PDs) [3][4][5][6][7][8][9][10][11]. In the last decade, bulk ZnO and its related heterostructures and many probable nanostructures have been investigated by different experimental techniques because of the possibility that a wide range of applications can be done with them [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Structural and Optical Properties of ZnO Thin Films Grown on Different Substrates by Mist-CVD Enhanced with Ozone Gas Produced by Corona Discharge Plasma

Kutlu-Narin

Narin

Li̇şesi̇vdi̇n

et al. 2021

Advances in Condensed Matter Physics

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This study focuses on the growth and physical properties of ZnO thin films on different substrates grown by mist-CVD enhanced with ozone (O3) gas produced by corona discharge plasma using O2. Here, O3 is used to eliminate the defects related to oxygen in ZnO thin films. ZnO thin films are grown on amorphous soda-lime glass (SLG) and single crystals SiO2/Si (100) and c-plane Al2O3 substrates at 350°C of low growth temperature. All ZnO thin films show dominant (0002) diffraction peaks from X-ray diffraction (XRD). As expected, full width at half maximum (FWHM) of (0002) is decreasing in ZnO thin films on single-crystal substrates, especially c-Al2O3 due to similar crystal structure. It is found that the strain in the films is lowest in ZnO/c-Al2O3. The surface morphologies of the thin films are studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements. Grown ZnO films have a hexagonal and triangular nanostructure with different nanostructure sizes depending on the used substrate types. The calculated surface roughness is dramatically decreased in ZnO/c-Al2O3 compared to the other grown structures. The confocal Raman measurements show the E2(H) peak of ZnO thin films at 437 cm−1. It is suggested that O3 gas produced by corona discharge plasma using O2 can be useful to obtain better crystal quality and physical properties in ZnO thin films.

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“…According to theoretical and practical calculations, ZnO is a direct transition semiconductor; thus, the optical bandgap of the ZnO-base films can be determined by using Tauc's plot method 21 , as given by αhν 2 ~hν -E g , where a, h, ν, and E g are the absorption coefficient, Planck constant, frequency, and optical band gap, respectively. The optical bandgap of the GZO film is extrapolated from the straight-line portion of the curve to the zero absorption coefficient value, as shown in Figure 2b.…”

Section: Optical Propertiesmentioning

confidence: 99%

Relationship between electrical and optical characterization of Ga-doped ZnO thin films deposited by magnetron sputtering

2023

Sci. Tech. Dev. J.

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Introduction: Transparent conducting films have received much attention in energy conversion applications. To replace high-cost indium-tin-oxide (ITO), Ga-doped ZnO (GZO) film is considered due to its high conductivity, good transparency, low cost, and low toxicity. Methods: GZO and pure ZnO films were deposited on glass substrates by dc magnetron sputtering. The crystalline structure of the samples was verified by using X-ray diffraction. In particular, the relationship between the electrical and optical characterization of the GZO film was investigated through the plasma wavelength obtained from transmittance and reflectance spectra. Meanwhile, carrier transport was directly confirmed by Hall effect-based measurements. Results: The GZO film shows a hexagonal wurtzite structure, with successful incorporation of Ga into the ZnO lattice. Ga doping increases the carrier concentration, leading to a decrease in the resistivity of the film. This study also discusses the correlation of carrier transport obtained from Hall effect-based measurements and optical spectroscopies. Here, we extracted the optical carrier concentration and optical mobility from the plasma wavelength and compared them with the Hall data. Conclusion: The dependence of carrier transport on ionized impurity scattering can be pointed out. It proposes an effective way to qualitatively predict the electrical characteristics and transport properties of thin films via optical transmittance and reflectance analysis.

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Surface nanosheets evolution and enhanced photoluminescence properties of Al-doped ZnO films induced by excessive doping concentration

Cited by 37 publications

References 36 publications

Influence of the thermal annealing on the morphological and structural properties of ZnO films deposited onto polyimide substrates by ink-jet printing

Influence of the thermal annealing on the morphological and structural properties of ZnO films deposited onto polyimide substrates by ink-jet printing

Investigation of Structural and Optical Properties of ZnO Thin Films Grown on Different Substrates by Mist-CVD Enhanced with Ozone Gas Produced by Corona Discharge Plasma

Relationship between electrical and optical characterization of Ga-doped ZnO thin films deposited by magnetron sputtering

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