Surface nitridation of silicon nano‐particles using double multi‐hollow discharge plasma CVD

Abstract

We present production of silicon nano‐particles and their surface nitridation for efficient multiple‐exciton generation. Nitridated silicon nano‐particles were produced using double multi‐hollow discharge plasma CVD, where generation of silicon particles and their nitridation were independently performed using SiH4/H2 and N2 multi‐hollow discharge plasmas. We succeeded in controlling nitrogen content in a silicon nano‐particle by varying a number density of N radicals irradiated to the Si particle. We also observed strong photoluminescence (PL) emission around 300‐500 nm from silicon nano‐particles, where the PL peak energy is about 2.5 and 3.1 eV for pure Si nano‐particles, and 2.5, 3.1, and 4.1 eV for nitridated Si nano‐particles. The additional UV‐peak of 4.1 eV from nitridated Si particles is closely related to the nitridation surface layer on Si nano‐particles (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Effects of Gas Pressure on the Size Distribution and Structure of Carbon Nanoparticles Using Ar + CH₄Multi-Hollow Discharged Plasma Chemical Vapor Deposition

“…Nanoparticles often involve not only the features of their base materials but also nanoscale effects, including unique and attractive properties of nanoparticles that are dramatically different from those of bulk materials. The properties of nanoparticles are highly sensitive to their size, structure, and composition [4][5][6][7][8][9][10][11][12].…”

Silicon Nitride Encapsulated Silicon Nanocrystals for Lithium Ion Batteries

“…Therefore, N 2 plasma treatment can be a robust technique to provide a surface SiN x coating while preserving the Si NC core. This effect was used by Uchida et al to achieve surface nitridation of Si NCs using double multi‐hollow discharge plasma chemical vapor deposition. Finally, Green and coworkers synthesized Si NCs embedded in SiN x films via precipitation of Si from Si‐rich SiN x films through high‐temperature annealing.…”

Gas‐Phase Plasma Synthesis of Free‐Standing Silicon Nanoparticles for Future Energy Applications

“…Compared to the other Si‐NP synthesis methods, gas‐phase plasma‐chemical processing techniques have unique advantages like one‐step production of free‐standing Si‐NPs, the feasibility of promoting high throughput synthesis, the flexibility of using the precursor material in any desired form (i.e., solid, liquid, or gas form), and the freedom of modifying the material morphology and surface chemistry by taking advantage of tunable plasma parameters. As an example, non‐thermal plasmas, multi‐hollow discharges, and remote expanding thermal plasmas have been reported as suitable synthesis techniques of free‐standing Si‐NPs using various precursors, where in situ surface functionalization and morphological modification via in situ etching are also possible. Higher throughputs up to ∼100 mg min −1 are reported in lab‐scale gas‐phase plasma processing tools, which is already in the order of fab‐scale production expectations for technological applications.…”