Surface Oxidation of Bi<sub>2</sub>(Te,Se)<sub>3</sub> Topological Insulators Depends on Cleavage Accuracy

Thomas, Conor R.; Vallon, Matthew K.; Frith, Matthew G.; Sezen, Hikmet; Kushwaha, Satya; Cava, R. J.; Schwartz, Jeffrey; Bernasek, Steven L.

doi:10.1021/acs.chemmater.5b03923

Cited by 51 publications

(34 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…If a chemical reaction was responsible for the termination change, this would explain why these remained 22 Se-terminated. The detection of oxygen on ex situ cleaved surfaces, as well as data widely found in the literature, indicates the possibility of a surface reaction with air [13,15,39]. In addition, scanning photoelectron microscopy shows that step edges oxidize much faster than the basal planes for Bi 2 Te 2 Se [39], leading to the conclusion that step edge densities will have a profound effect on the rate of oxidation.…”

Section: Discussionsupporting

confidence: 52%

Termination of single-crystal Bi2Se3 surfaces prepared by various methods

2016

View full text Add to dashboard Cite

Bismuth Selenide (Bi 2 Se 3 ) is a topological insulator with a two-dimensional layered structure that enables clean and well-ordered surfaces to be prepared by cleaving. Although some studies have demonstrated that the cleaved surface is terminated with Se, as expected from the bulk crystal structure, other reports have indicated either a Bi-or mixed-termination. Low energy ion scattering (LEIS), low energy electron diffraction (LEED) and x-ray photoelectron spectroscopy (XPS) are used here to compare surfaces prepared by ex situ cleaving, in situ cleaving, and ion bombardment and annealing (IBA) in ultra-high vacuum (UHV). Surfaces prepared by in situ cleaving and IBA are well ordered and Se-terminated. Ex situ cleaved samples could be either Se-terminated or Bi-rich, are less well ordered and have adsorbed contaminants. This suggests that a chemical reaction involving atmospheric contaminants, which may preferentially adsorb at surface defects, could contribute to the non-reproducibility of the termination. ____________

show abstract

Section: Discussionsupporting

confidence: 52%

Termination of single-crystal Bi2Se3 surfaces prepared by various methods

2016

View full text Add to dashboard Cite

show abstract

“…5), respectively. These values are in good agreement with the reported binding energies of Bi2Te3 [26][27][28][29] . In addition, a second set of peaks at higher binding energy is visible for every element, comparable to the binding energies in Bi2O3 and TeO2.…”

Section: Resultssupporting

confidence: 91%

Low-temperature MOCVD deposition of Bi 2 Te 3 thin films using Et 2 BiTeEt as single source precursor

Bendt

Gassa

Jooß

et al. 2018

Journal of Crystal Growth

View full text Add to dashboard Cite

Et2BiTeEt was used as single source precursor for the deposition of Bi2Te3 thin films on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) at very low substrate temperatures. Stoichiometric and crystalline Bi2Te3 films were grown at 230 °C, which is approximately 100 °C lower compared to conventional MOCVD processes using one metal organic precursors for each element. The Bi2Te3 films were characterized using scanning electron microscopy, high-resolution transmission electron microscopy and X-ray diffraction. The elemental composition of the films, which was determined by energy-dispersive X-ray spectroscopy and Xray photoelectron spectroscopy, was found to be strongly dependent of the substrate temperature.

show abstract

“…The amount of bismuth and selenium oxides did not increase upon exposure to air. A very recent XPS study clearly revealed that Bi 2 Te 3 and Bi 2 Te 2 Se easily form the corresponding oxides upon expose to air, while Bi 2 Se 3 was significantly more stable . Comparable findings were previously reported and also observed for Bi 2 Te 3 nanoparticles, which were shown to form bismuth oxides and tellurium oxides within a day upon expose to air …”

Section: Resultssupporting

confidence: 70%

Synthesis of Sb₂Se₃ and Bi₂Se₃ Nanoparticles in Ionic Liquids at Low Temperatures and Solid State Structure of [C₄C₁Im]₃[BiCl₆]

Loor

Bendt

Schaumann

et al. 2016

Zeitschrift anorg allge chemie

View full text Add to dashboard Cite

Crystalline Sb2Se3 nanoparticles were prepared by reaction of SbCl3 with (Et3Si)2Se in the presence of oleylamine (OA) in the ionic liquid [C4C1Im]Cl, whereas the reaction of (Et3Si)2Se with [C4C1Im]3[BiCl6] (1), which was obtained from the reaction of BiCl3 with [C4C1Im]Cl and structurally characterized by single‐crystal X‐ray diffraction, yielded Bi‐rich Bi2Se3 nanoparticles. In contrast, the reaction of the reactive IL [C4C1Im]3[Bi3I12] with (Et3Si)2Se in the presence of oleylamine in [C4C1Im]I gave phase‐pure Bi2Se3 nanoparticles. The chemical composition of the nanoparticles was investigated by EDX, while possible surface contaminations were studied by XPS and IR spectroscopy. The morphology of the nanoparticles was studied by SEM and TEM.

show abstract

Surface Oxidation of Bi₂(Te,Se)₃ Topological Insulators Depends on Cleavage Accuracy

Cited by 51 publications

References 24 publications

Termination of single-crystal Bi2Se3 surfaces prepared by various methods

Termination of single-crystal Bi2Se3 surfaces prepared by various methods

Low-temperature MOCVD deposition of Bi 2 Te 3 thin films using Et 2 BiTeEt as single source precursor

Synthesis of Sb₂Se₃ and Bi₂Se₃ Nanoparticles in Ionic Liquids at Low Temperatures and Solid State Structure of [C₄C₁Im]₃[BiCl₆]

Contact Info

Product

Resources

About

Surface Oxidation of Bi2(Te,Se)3 Topological Insulators Depends on Cleavage Accuracy

Cited by 51 publications

References 24 publications

Termination of single-crystal Bi2Se3 surfaces prepared by various methods

Termination of single-crystal Bi2Se3 surfaces prepared by various methods

Low-temperature MOCVD deposition of Bi 2 Te 3 thin films using Et 2 BiTeEt as single source precursor

Synthesis of Sb2Se3 and Bi2Se3 Nanoparticles in Ionic Liquids at Low Temperatures and Solid State Structure of [C4C1Im]3[BiCl6]

Contact Info

Product

Resources

About

Surface Oxidation of Bi₂(Te,Se)₃ Topological Insulators Depends on Cleavage Accuracy

Synthesis of Sb₂Se₃ and Bi₂Se₃ Nanoparticles in Ionic Liquids at Low Temperatures and Solid State Structure of [C₄C₁Im]₃[BiCl₆]