2019
DOI: 10.1088/2053-1591/ab31c4
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Surface passivated aqueous mediated synthesis of CdTe QDs: potential nano thin films

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Cited by 6 publications
(3 citation statements)
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“…Cadmium telluride (CdTe) is a semiconductor formed in the form of QDs nanomaterial according to the preparation method. It has a direct energy gap of about 1.53 eV, making it widely used in many applications such as solar cells, biological sensors, and other applications [9][10][11]. Recently, many studies have reported the different methods used to prepare CdTe such as the aqueous method using microwave irradiation [12], and the ultrasonic thermal synthesis [13].…”
Section: Issn: 0067-2904mentioning
confidence: 99%
“…Cadmium telluride (CdTe) is a semiconductor formed in the form of QDs nanomaterial according to the preparation method. It has a direct energy gap of about 1.53 eV, making it widely used in many applications such as solar cells, biological sensors, and other applications [9][10][11]. Recently, many studies have reported the different methods used to prepare CdTe such as the aqueous method using microwave irradiation [12], and the ultrasonic thermal synthesis [13].…”
Section: Issn: 0067-2904mentioning
confidence: 99%
“…Cadmium telluride (CdTe) and cadmium selenide (CdSe) are members of the II-VI group, which have been employed in various fields with the progress of scientific development in recent years due to their different properties from CdSe and CdTe bulk [8]. Cadmium telluride (CdTe) is direct-gap, of approximately 1.53 eV, semiconductor [9]. Cadmium-selenium (CdSe) is one of the most popular in semiconductors applications, with a direct energy gap of about 1.74 eV [10].…”
Section: Introductionmentioning
confidence: 99%
“…Cadmium telluride (CdTe) is a semiconducting nanomaterial with a direct energy gap of approximately 1.53 eV. It is a good candidate for many applications, such as biological sensors, solar cells, and other applications [19][20][21]. On the other hand, Cadmium-selenium CdSe is one of the most widely used semiconductors with a direct energy gap of approximately 1.74 eV [22].…”
Section: Introductionmentioning
confidence: 99%