Surface Passivation and Emitter Recombination Parameters

Hoex, Bram

doi:10.1002/9781118927496.ch12

Cited by 4 publications

References 41 publications

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24.2% efficient POLO back junction solar cell with an AlO_x/SiN_y dielectric stack from an industrial‐scale direct plasma‐enhanced chemical vapor deposition system

Min,

Mertens,

Larionova

et al. 2024

Progress in Photovoltaics

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An aluminum oxide (AlOx)/silicon nitride (SiNy) dielectric stack was developed using an industrial plasma‐enhanced chemical vapor deposition (PECVD) system with low‐frequency (LF) plasma source for the surface passivation of undiffused textured p‐type crystalline silicon. The median recombination current density is 4.3 fA cm−2 as determined from photoconductance decay lifetime measurements and numerical device modeling. To the best of our knowledge, this is the first time to present a high‐quality LF‐PECVD AlOx/SiNy passivation stack on undiffused textured p‐type crystalline silicon wafers, which are cleaned with industrial processes using HF, HCl, and O3. The simulation agrees well with the measured effective carrier lifetime if the velocity parameters of 5.6 cm s−1 for holes and 803 cm s−1 for electrons are applied with a fixed negative charge density of −3 × 1012 cm−2. The process integration of developed AlOx/SiNy dielectric stack is successfully demonstrated by fabricating p‐type back junction solar cells featuring a poly‐Si‐based passivating contact at the cell rear side. As the best cell efficiency, we achieve 24.2% with an open‐circuit voltage of 725 mV on a M2‐sized Ga‐doped p‐type Czochralski‐grown Si wafer as independently confirmed by ISFH CalTeC.

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24.2% efficient POLO back junction solar cell with an AlO_x/SiN_y dielectric stack from an industrial‐scale direct plasma‐enhanced chemical vapor deposition system

Min,

Mertens,

Larionova

et al. 2024

Progress in Photovoltaics

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High-Efficiency Silicon Solar Cell Concepts

Green

2018

McEvoy's Handbook of Photovoltaics

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Extracting dielectric fixed charge density on highly doped crystalline-silicon surfaces using photoconductance measurements

Hoex

2017

Journal of Applied Physics

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A novel method for the extraction of fixed interface charge, Qf, and the surface recombination parameters, Sn0 and Sp0, from the injection-level dependent effective minority carrier lifetime measurements is presented. Unlike conventional capacitance-voltage measurements, this technique can be applied to highly doped surfaces provided the surface carrier concentration transitions into strong depletion or inversion with increased carrier injection. By simulating the injection level dependent Auger-corrected inverse lifetime curve of symmetrically passivated and diffused samples after sequential annealing and corona charging, it was revealed that Qf, Sn0, and Sp0 have unique signatures. Therefore, these important electronic parameters, in some instances, can independently be resolved. Furthermore, it was shown that this non-linear lifetime behaviour is exhibited on both p-type and n-type diffused inverted surfaces, by demonstrating the approach with phosphorous diffused n+pn+ structures and boron diffused p+np+ structures passivated with aluminium oxide (AlOx) and silicon nitride, respectively (SiNx). The results show that the approximation of a mid-gap Shockley-Read-Hall defect level with equal capture cross sections is able to, in the samples studied in this work, reproduce the observed injection level dependent lifetime behaviour.

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Surface Passivation and Emitter Recombination Parameters

Cited by 4 publications

References 41 publications

24.2% efficient POLO back junction solar cell with an AlO_x/SiN_y dielectric stack from an industrial‐scale direct plasma‐enhanced chemical vapor deposition system

24.2% efficient POLO back junction solar cell with an AlO_x/SiN_y dielectric stack from an industrial‐scale direct plasma‐enhanced chemical vapor deposition system

High-Efficiency Silicon Solar Cell Concepts

Extracting dielectric fixed charge density on highly doped crystalline-silicon surfaces using photoconductance measurements

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Surface Passivation and Emitter Recombination Parameters

Cited by 4 publications

References 41 publications

24.2% efficient POLO back junction solar cell with an AlOx/SiNy dielectric stack from an industrial‐scale direct plasma‐enhanced chemical vapor deposition system

24.2% efficient POLO back junction solar cell with an AlOx/SiNy dielectric stack from an industrial‐scale direct plasma‐enhanced chemical vapor deposition system

High-Efficiency Silicon Solar Cell Concepts

Extracting dielectric fixed charge density on highly doped crystalline-silicon surfaces using photoconductance measurements

Contact Info

Product

Resources

About

24.2% efficient POLO back junction solar cell with an AlO_x/SiN_y dielectric stack from an industrial‐scale direct plasma‐enhanced chemical vapor deposition system

24.2% efficient POLO back junction solar cell with an AlO_x/SiN_y dielectric stack from an industrial‐scale direct plasma‐enhanced chemical vapor deposition system