Surface Passivation of Efficient Nanotextured Black Silicon Solar Cells Using Thermal Atomic Layer Deposition

Wang, Weicheng; Lin, Chan-Shing; Chen, Hsin-Jui; Chang, Chi Wei; Huang, Joe Chun‐Chia; Yang, Ming-Jui; Tjahjono, Budi; Huang, Jianxing; Hsu, Wen Dung; Chen, Miin-Jang

doi:10.1021/am402889k

Cited by 106 publications

(67 citation statements)

References 40 publications

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“…Thus ALD has been widely applied in a variety of nanoscale devices such as transistors2, memories3, medical devices4, fuel cells56, and solar cells7. However, it is necessary to keep a low deposition temperature for self-limiting ALD growth in order to prevent the thermal decomposition or desorption of precursors8.…”

mentioning

confidence: 99%

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

Shih

Lee

Kao

et al. 2017

Sci Rep

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Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

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confidence: 99%

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

Shih

Lee

Kao

et al. 2017

Sci Rep

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“…This value was two times higher than that of the other samples, as shown in Table . The front surface recombination is closely related to the blue response at a wavelength of 400 nm, which corresponds to carrier generation and recombination from blue light absorption near the surface .…”

Section: Resultsmentioning

confidence: 99%

Novel field‐effect passivation for nanostructured Si solar cells using interfacial sulfur incorporation

Kim

Song

Park

et al. 2017

Progress in Photovoltaics

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Surface passivation of a nanostructured Si solar cells plays a crucial role in collecting photogenerated carriers by mitigating carrier recombination at surface defect sites. Interface modification by additional sulfur (S) incorporation is proposed to enhance the field‐effect passivation performance. Here, we report that simple annealing in a H2S ambient induced additional negative fixed charges at the interface between atomic‐layer‐deposited Al2O3 and nanostructured Si. Annealing at various temperatures allowed us to control the S concentration and the fixed charge density. The optimized S incorporation at the interface significantly enhanced the negative fixed charge density and the minority carrier lifetime up to ~5.9 × 1012 cm−2 and ~780 μs, respectively. As a result, the internal quantum efficiency was nearly two times higher in the blue response region than that of control cells without S incorporation. Copyright © 2017 John Wiley & Sons, Ltd.

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“…This supplementary coating will modify the optical properties of the solar cell. In particular, as the refractive index of aluminium oxide lies between the indices of air and silicon, a decrease of reflectance is generally observed on aluminium oxide coated nanotextured samples [50,51]. The consequences of this additional layer on the light-trapping and high incident angle response have not been evaluated.…”

Section: Resultsmentioning

confidence: 99%

Plasma nanotexturing of silicon surfaces for photovoltaics applications: influence of initial surface finish on the evolution of topographical and optical properties

Fischer¹,

Drahi²,

Germer³

et al. 2017

Opt. Express

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Using a plasma to generate a surface texture with feature sizes on the order of tens to hundreds of nanometers (“nanotexturing”) is a promising technique being considered to improve efficiency in thin, high-efficiency crystalline silicon solar cells. This study investigates the evolution of the optical properties of silicon samples with various initial surface finishes (from mirror polish to various states of micron-scale roughness) during a plasma nanotexturing process. It is shown that during said process, the appearance and growth of nanocone-like structures are essentially independent of the initial surface finish, as quantified by the auto-correlation function of the surface morphology. During the first stage of the process (2 min to 15 min etching), the reflectance and light-trapping abilities of the nanotextured surfaces are strongly influenced by the initial surface roughness; however, the differences tend to diminish as the nanostructures become larger. For the longest etching times (15 min or more), the effective reflectance is less than 5 % and a strong anisotropic scattering behavior is also observed for all samples, leading to very elevated levels of light-trapping.

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Surface Passivation of Efficient Nanotextured Black Silicon Solar Cells Using Thermal Atomic Layer Deposition

Cited by 106 publications

References 40 publications

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

Novel field‐effect passivation for nanostructured Si solar cells using interfacial sulfur incorporation

Plasma nanotexturing of silicon surfaces for photovoltaics applications: influence of initial surface finish on the evolution of topographical and optical properties

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