2009
DOI: 10.1021/jp906573w
|View full text |Cite
|
Sign up to set email alerts
|

Surface Passivation of Nanoporous TiO2 via Atomic Layer Deposition of ZrO2 for Solid-State Dye-Sensitized Solar Cell Applications

Abstract: We report here the utilization of atomic layer deposition to passivate surface trap states in mesoporous TiO 2 nanoparticles for solid-state dye-sensitized solar cells based on 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD). By depositing ZrO 2 films with angstrom-level precision, coating the mesoporous TiO 2 produces over a two-fold enhancement in short-circuit current density, as compared to a control device. Impedance spectroscopy measurements provide evidence that the Z… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

3
119
1

Year Published

2010
2010
2024
2024

Publication Types

Select...
6
3

Relationship

0
9

Authors

Journals

citations
Cited by 144 publications
(123 citation statements)
references
References 45 publications
3
119
1
Order By: Relevance
“…Several studies show that high band-gap metal-oxide materials such as In 2 O 3 , ZrO 2 , Al 2 O 3 , Nb 2 O 5 , Ga 2 O 3 and SiO 2 could reduce recombination in DSSCs by blocking the back-transfer of electrons and thus preventing the recombination of electrons with either oxidized dye molecules or the oxidized redox couple (the latter one is thought to be particularly dominant in device performance degradation) [17][18][19][20][21][22] or reducing the density of surface trap states on the TiO 2 surface. 18,23 In addition, some studies demonstrate that metal-oxides like Nb 2 O 5 , SrTiO 3 , ZrO 2 and Al 2 O 3 can contribute to device performance enhancement by inducing a surface dipole at the metal-oxide/dye interface, leading to a negative shi in the TiO 2 conduction band 24 and an enhancement in the injection yield of photo-induced electrons. 25 In addition to the improved electrodynamics at the interface, improvement in device performance has also been related to dye adsorption enhancement.…”
Section: -14mentioning
confidence: 99%
“…Several studies show that high band-gap metal-oxide materials such as In 2 O 3 , ZrO 2 , Al 2 O 3 , Nb 2 O 5 , Ga 2 O 3 and SiO 2 could reduce recombination in DSSCs by blocking the back-transfer of electrons and thus preventing the recombination of electrons with either oxidized dye molecules or the oxidized redox couple (the latter one is thought to be particularly dominant in device performance degradation) [17][18][19][20][21][22] or reducing the density of surface trap states on the TiO 2 surface. 18,23 In addition, some studies demonstrate that metal-oxides like Nb 2 O 5 , SrTiO 3 , ZrO 2 and Al 2 O 3 can contribute to device performance enhancement by inducing a surface dipole at the metal-oxide/dye interface, leading to a negative shi in the TiO 2 conduction band 24 and an enhancement in the injection yield of photo-induced electrons. 25 In addition to the improved electrodynamics at the interface, improvement in device performance has also been related to dye adsorption enhancement.…”
Section: -14mentioning
confidence: 99%
“…Insulating materials with conduction bands higher than that of TiO2, such as Al2O3, SiO2, ZrO2, and SrO, have been coated onto TiO2 photoanodes to enhance the performance of DSSCs [31,32]. Palomares et al [31] deposited SiO2, Al2O3, and ZrO2 onto the surfaces of TiO2 electrodes by a dip-coating technique using an organic solution of their respective alkoxides.…”
Section: Blocking Layermentioning
confidence: 99%
“…The electron lifetime increased exponentially as the number of ALD cycles increased, but the photocurrent significantly decreased at the same time. Li et al [32] reported the utilization of ALD to passivate surface trap states in mesoporous TiO2 NPs for solid-state DSSCs. The mesoporous TiO2 was coated by depositing ZrO2 films with angstrom-level precision, producing a more than two-fold enhancement in short-circuit current density.…”
Section: Blocking Layermentioning
confidence: 99%
“…Controlling the impact of surface or interface-derived electronic states is, therefore, a prime goal in modern semiconductor processing. To this end, utilization of an interfacial semiconductor, typically a metal oxide with high energy band gap, layer is commonly employed [8,15,16]. However, the main drawback associated with such an interfacial layer is the fact that just a couple of nanometers of such a layer can significantly hamper injection efficiency.…”
Section: Introductionmentioning
confidence: 99%