Surface Phenomena: Rinsing and Drying

Reinhardt, Kitt; Reidy, Richard F.; Marsella, John A.

doi:10.1002/9781118071748.ch4

Cited by 4 publications

(3 citation statements)

References 50 publications

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“…As many TBMs are engineered to be resistant to different chemistries, selecting the proper solvent to attack and dissolve the adhesive can be challenging. Additionally, when considering particle performance, selecting a chemistry with a compatible rinsing medium is important as a poor choice can lead to insufficient rinsing of the solvent in the form of precipitation or residues [17]. Therefore, it was necessary to not only select an appropriate chemistry that would dissolve and remove the TBM but also develop proper rinse procedures.…”

Section: A Chemistry Assessmentmentioning

confidence: 99%

Cleaning and Particle Challenges in the Temporary Bonding and Debonding Process

Bahena,

Jones,

Donnelly

et al. 2024

IMAPSource Proceedings

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The demands of 5G, Internet of Things and other global technology trends, combined with the increasing cost of scaling down process nodes, have created a shift towards more integrated packaging requirements. The emergence of advanced packaging technologies, such as Fan-Out Wafer Level Packaging (FOWLP), 2.5D/3D IC packaging, and heterogenous integration, brings potential for smaller form factors with increased functionality and bandwidth [1]. Backside processing or thinning of the device wafer is often needed for enabling these technologies. This requires the device wafer be adhered to a rigid carrier wafer using a temporary bonding material (TBM) for mechanical support during handling and processing. Following carrier release, the TBM must be thoroughly removed and cleaned from the device wafer. Many of these adhesives are exposed to high-power lasers or elevated temperatures, making removal more challenging. Sub-micron particle level clean demands for temporary bonding material (TBM) removal are also reaching standards typically reserved for front-end-of-line (FEOL) processing. This is especially crucial in 3D processes such as hybrid bonding where feature and pitch sizes are nearing <1 µm and insufficient cleaning can lead to failures in subsequent bonding processes [2]. Thus, careful consideration of all processing steps is necessary to meet stringent particle demands. This work investigates the removal of coated and baked TBM on silicon wafers, with an emphasis on processing conditions that obtain best particle results. Several chemistries were assessed at the beaker level by performing coupon-level studies and measuring surface properties. Based on these findings, studies with 300-mm wafers were performed using a customizable single-wafer processing tool.

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Section: A Chemistry Assessmentmentioning

confidence: 99%

Cleaning and Particle Challenges in the Temporary Bonding and Debonding Process

Bahena,

Jones,

Donnelly

et al. 2024

IMAPSource Proceedings

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“…The mechanism can be either chemical, or tribo-electrical. A detailed explanation of the chemical reaction between the water and a SiO2 surface is detailed in the handbook of cleaning for semiconductor manufacturing [13]. In this case, a deprotonation of the silanol group (found in silicon dioxide) in the water leaves behind a negatively charged siloxane group.…”

Section: Surface Charging Caused By Rinse Spinning Processmentioning

confidence: 99%

Understanding the impact of rinse on SEM image distortion and hole patterning variability

Soltani,

LE-GRATIET,

Bérard-Bergery

et al. 2023

38th European Mask and Lithography Conference (EMLC 2023)

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“…Basically, the mechanism of wafer drying in semiconductor industry can be explained as: first reducing the amount of liquid on the wafer surface by mechanical forces. There are some approaches for removing the liquid such as spinning, high pressure gas blowing by nozzle or air-jet, vertical withdrawal from the liquid bath, using surface gradient tension and so on [2]. Second: if the mechanical forces in the liquid removal part are not sufficient for drying and some droplets or a thin liquid layer remain on the wafer surface, complete drying will be achieved by evaporation of the remaining layer on the wafer.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of High-Speed Linear Air-Knife Based Wafer Dryer

Tamaddon¹,

Belmiloud²,

Doumen

et al. 2012

SSP

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With the downscaling of devices, due to device geometry shrinkage, the total number of cleaning steps has increased dramatically. As a result, the number of drying cycles after cleaning has increased as well. As the device shrinks with the integration density increase, it is noteworthy that a perfect drying efficiency is mandatory to obtain a high performance device [. Basically, the mechanism of wafer drying in semiconductor industry can be explained as: first reducing the amount of liquid on the wafer surface by mechanical forces. There are some approaches for removing the liquid such as spinning, high pressure gas blowing by nozzle or air-jet, vertical withdrawal from the liquid bath, using surface gradient tension and so on [2]. Second: if the mechanical forces in the liquid removal part are not sufficient for drying and some droplets or a thin liquid layer remain on the wafer surface, complete drying will be achieved by evaporation of the remaining layer on the wafer. After this evaporation step, known as state transformation, the wafers will be completely dried. Evaporation of the remaining liquid layer is the main mechanism for generating drying defects (watermarks, residues, particles, and etc.)[3]. In this study, we propose a new methodology for semiconductor wafer drying based on a high-pressure gas flow. In comparison to conventional drying tools, the new drying set up combines high speed drying (wafer drying time down to 2 sec at 150mm.s-1) and a low number of added drying defects.

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Surface Phenomena: Rinsing and Drying

Cited by 4 publications

References 50 publications

Cleaning and Particle Challenges in the Temporary Bonding and Debonding Process

Cleaning and Particle Challenges in the Temporary Bonding and Debonding Process

Understanding the impact of rinse on SEM image distortion and hole patterning variability

Evaluation of High-Speed Linear Air-Knife Based Wafer Dryer

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