2022
DOI: 10.1039/d1fd00107h
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Surface photovoltage dynamics at passivated silicon surfaces: influence of substrate doping and surface termination

Abstract: We have monitored the temporal evolution of the band bending at controlled silicon surfaces after a fs laser pump excitation. Time-resolved surface photo-voltage (SPV) experiments were performed using time resolved...

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“…The influence of silicon substrate doping and surface termination on SPV has also been systematically studied by time resolved photoemission spectroscopy. 26 Water saturated and thermally oxidized Si(001) surfaces have been studied as a function of bulk doping. It has been shown that bulk doping has the highest influence on charge carrier lifetime.…”
Section: Siliconmentioning
confidence: 99%
“…The influence of silicon substrate doping and surface termination on SPV has also been systematically studied by time resolved photoemission spectroscopy. 26 Water saturated and thermally oxidized Si(001) surfaces have been studied as a function of bulk doping. It has been shown that bulk doping has the highest influence on charge carrier lifetime.…”
Section: Siliconmentioning
confidence: 99%