We report on reproducibly observed enhancement of luminescence within inhomogeneous InN films near both In clusters and pores. Low-temperature absorption in these films deviates from that expected for a conventional semiconductor. The enhancement of emission is discussed in terms of coupling of excited radiative states with localized particle plasmons. It implies concentration of an electric field near the pores and clusters, which are considered, respectively, as metallic and dielectric ellipsoids within a semiconductor matrix.1 Introduction It has been known for a long time that optical properties of a radiating dipole are changed in the vicinity of a metal surface [1]. This effect arises due to excitation of surface plasmons at a metal interface and coupling of them with the radiator. Currently, this phenomenon attracts a considerable attention in the context of light enhancement in structures with many of defects. For instance, it is realized for a InGaN quantum well covered by a metal film, what can be useful for efficient light emitting diodes [2]. Generally, this effect is similar to an increase of spontaneous emission probability in a resonator cavity considered by Purcell [3]. The plasmon excitation concentrates the electromagnetic energy that enhances the density of possible photon states. In accordance with the golden rule, this increases the transition rate and, hence, the emission intensity. The coupled states are formed due to the proximity of the frequencies and the spatial closeness of the radiator and plasmonic excitation.