Surface plasma treatment boosting antiferroelectricity and energy storage performance of AgNbO3 film

Zhou, Yunpeng; Tang, Zhehong; Bai, Yijia; Guo, Fei; Chen, Jieyu

doi:10.1016/j.jeurceramsoc.2023.12.035

Cited by 6 publications

(2 citation statements)

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“…Therefore, intensive investigations have focused on increasing the stability of the AFE phase to optimize energy-storage performance. They usually rely on methods of optimizing the parameters through ceramics and thin films, such as chemical modification and structural design [13][14][15]. So far, significant breakthroughs have been achieved in recent years and outstanding W rec of 13.13 J/cm 3 with a high η of 56% was achieved in AN-based thin film by employing oxygen ion surface plasma technology in conjunction with the sol-gel method [14].…”

Section: Introductionmentioning

confidence: 99%

“…They usually rely on methods of optimizing the parameters through ceramics and thin films, such as chemical modification and structural design [13][14][15]. So far, significant breakthroughs have been achieved in recent years and outstanding W rec of 13.13 J/cm 3 with a high η of 56% was achieved in AN-based thin film by employing oxygen ion surface plasma technology in conjunction with the sol-gel method [14]. Despite the great progress, however, the obtained AN-based materials are mostly ceramics or thin film, in which the microstructure is inhomogeneous, restricting the further improvement of energy-storage density [16].…”

Section: Introductionmentioning

confidence: 99%

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Growth, Structure, and Electrical Properties of AgNbO3 Antiferroelectric Single Crystal

Zhao,

Chen,

et al. 2024

Crystals

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AgNbO3 (AN) lead-free antiferroelectric material has attracted great attention in recent years. However, little focus has been directed toward a single crystal that can provide more basic information. In this study, we successfully grew high-quality AN single crystals, using a flux method, with dimensions of 5 × 5 × 3 mm3. A systematic investigation into the crystal structure, domain structure, and electrical properties of a [001]-oriented AN single crystal was conducted. X-ray diffraction and domain structure analysis revealed an orthorhombic phase structure at room temperature. Stripe-like 90° domains aligning parallel to the [110] direction with a thickness of approximately 10–20 μm were observed using a polarized light microscope. The temperature dependence of dielectric permittivity showed M1-M2, M2-M3, and M3-O phase transitions along with increasing temperature, but the phase transition temperatures were slightly higher than those of ceramic. The AN single crystal also exhibited double polarization-electric field (P-E) hysteresis loops, which enabled good recoverable energy-storage density and efficiency comparable to ceramic. Additionally, double P-E loops were kept stable at various temperatures and frequencies, demonstrating robust stability and confirming typical antiferroelectric characteristics. Our work provides valuable insights into understanding the fundamental antiferroelectric properties of AN-based materials.

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