Surface plasmon assisted electron-photon interaction in metal-oxide-metal layered structures

Szentirmay, Zs.

doi:10.1016/0079-6727(91)90005-3

Cited by 17 publications

(20 citation statements)

References 74 publications

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“…[13][14][15][16][17][18] MIM structures that exhibit VCNR, EL, and EM are similar to those from which tunnel EL is observed, except that insulator thicknesses are greater ͑10− Ͼ 100 nm͒. The EL intensity was low; it was emitted from the whole area of the tunnel structure, and the maximum energy of the emitted photons in eV, h co , was equal to the maximum applied voltage, ͉qV co ͉ where h is Planck's constant, co , is the maximum frequency of the emitted radiation, and V co is the maximum voltage across the tunnel junction.…”

Section: Introductionmentioning

confidence: 99%

Surface plasmon polariton-assisted electron emission and voltage-controlled negative resistance of Al–Al2O3–Au diodes

Hickmott

2010

Journal of Applied Physics

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Surface plasmon polariton enhanced electroluminescence and electron emission from electroformed Al-Al2O3-Ag diodes J. Appl. Phys. 112, 073717 (2012); 10.1063/1.4758289 Defect conduction bands, localization, and temperature-dependent electron emission from Al -Al 2 O 3 -Au diodes J. Appl. Phys. 108, 093703 (2010); 10.1063/1.3504220 Voltage-controlled negative resistance and electroluminescent spectra of Al -Al 2 O 3 -Au diodes Voltage-dependent dielectric breakdown and voltage-controlled negative resistance in anodized Al-Al 2 O 3 -Au diodesElectrons are ejected from an Au surface when their energy exceeds the work function of Au, Au , which is 5.2 eV. The threshold voltage for the onset of electron emission from Al-Al 2 O 3 -Au diodes that develop voltage-controlled negative resistance in their current-voltage characteristics is V EM Х 2.4 V. The threshold voltage for electroluminescence ͑EL͒ is V EL = 1.6-2.0 V. The interaction of electrons with surface plasmon polaritons ͑SPPs͒ produced at the Al 2 O 3 -Au interface by EL photons provides a mechanism by which electrons gain enough energy to surmount the work function barrier at the Au-vacuum interface when the applied voltage is less than 5.2 V. The interaction of EL photons with surface plasmons in Au is a new mechanism for creating SPPs.

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Section: Introductionmentioning

confidence: 99%

Surface plasmon polariton-assisted electron emission and voltage-controlled negative resistance of Al–Al2O3–Au diodes

Hickmott

2010

Journal of Applied Physics

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“…For our DMIMJ, because of the difference of thickness and forbidden energy-band width of the Al 2 O 3 and MgF 2 barriers, the second barrier MgF 2 will form a series of split energy levels E n [10] . When tunnel electrons modulated by the first barrier Al 2 O 3 possess energy close to E n , they will have a resonant tunneling with a higher tunneling efficiency in the MgF 2 barrier, and thus a higher energy (frequency) of SPP excitation.…”

Section: Light Emission Spectrummentioning

confidence: 99%

“…The light emission quantum efficiency for the MIMJ is 10 -7 -10 -6 [4] , which is far from the need of the practical application. According to theoretical analysis [10] , for the double barrier tunnel junction, due to quantum size effect, there are a series of discrete energy levels produced in the forbidden-band of the barrier, on which the electrons will tunnel resonantly from the bottom to top electrodes. The resonant tunnel electrons will have a higher penetrating probability and then a stronger SPPs excitation, which will excite a higher light emission efficiency.…”

Section: Introductionmentioning

confidence: 99%

“…To improve the light emission characteristics of the MIM junction, much theoretical and experimental research has been done [2][3][4][5][6][7][8][9] , many of which were based on the single-barrier light emission junction. Because of the limit of the interaction intensity of the tunnel electron with the inner electromagnetic field in the single barrier, the excitation of SPP and the transition of SPP to free photons for the single-oxide barrier junction are all limited in efficiency [10] . The light emission quantum efficiency for the MIMJ is 10 -7 -10 -6 [4] , which is far from the need of the practical application.…”

Section: Introductionmentioning

confidence: 99%

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Preparation and characteristics of Cu/Al2O3/MgF2/Au tunnel junction

Wang

Yu³

et al. 2009

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

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The fabrication process of Cu/Al 2 O 3 /MgF 2 /Au double-barrier metal/insulator/metal junction (DMIMJ) was introduced, and more stable light emission from this junction was successfully observed. The light emission physical mechanism of the junction was discussed. Results show that light emission spectrum of this structure locates at wavelength of 250-700 nm with two peaks at around 460 nm and 640 nm, which moves towards shorter wavelength region in comparison with that of the Al/Al 2 O 3 /Au junction. The light emission efficiency of this junction ranges from 0.7×10 -5 -2.0×10 -5 , which is 1 to 2 orders higher than that of the single-barrier Al/Al 2 O 3 /Au junction. The improved properties of this structure should be due to the electrons resonant tunneling effect in the double-barrier.

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“…Some SPPs in Ag can, in turn, migrate to the Ag-vacuum interface where they can radiate into vacuum. [46][47][48] Electrons provide a second mechanism to generate SPPs in Ag, process "5". Some injected electrons can gain enough energy by interacting with SPPs, process "6", to surmount the work function barrier at the Ag-vacuum interface and escape into vacuum, process "7", even if V S < / Ag /q.…”

Section: A Electronic Processes In Al-al 2 O 3 -Ag Diodesmentioning

confidence: 99%

Optical microcavities and enhanced electroluminescence from electroformed Al-Al2O3-Ag diodes

Hickmott

2013

Journal of Applied Physics

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Surface plasmon polariton enhanced electroluminescence and electron emission from electroformed Al-Al2O3-Ag diodes Surface plasmon polariton-assisted electron emission and voltage-controlled negative resistance of Al -Al 2 O 3 -Au diodes Electroluminescence (EL) and electron emission into vacuum (EM) occur when a non-destructive dielectric breakdown of Al-Al 2 O 3 -Ag diodes, electroforming, results in the development of a filamentary region in which current-voltage (I-V) characteristics exhibit voltage-controlled negative resistance. The temperature dependence of I-V curves, EM, and, particularly, EL of Al-Al 2 O 3 -Ag diodes with anodic Al 2 O 3 thicknesses between 12 nm and 30 nm, has been studied. Two filters, a long-pass (LP) filter with transmission of photons with energies less than 3.0 eV and a short-pass (SP) filter with photon transmission between 3.0 and 4.0 eV, have been used to characterize EL. The voltage threshold for EL with the LP filter, V LP , is $1.5 V. V LP is nearly independent of Al 2 O 3 thickness and of temperature and is 0.3-0.6 V less than the threshold voltage for EL for the SP filter, V SP . EL intensity is primarily between 1.8 and 3.0 eV when the bias voltage, V S Շ 7 V. EL in the thinnest diodes is enhanced compared to EL in thicker diodes. For increasing V S , for diodes with the smallest Al 2 O 3 thicknesses, there is a maximum EL intensity, L MX , at a voltage, V LMX , followed by a decrease to a plateau. L MX and EL intensity at 4.0 V in the plateau region depend exponentially on Al 2 O 3 thickness. The ratio of L MX at 295 K for a diode with 12 nm of Al 2 O 3 to L MX for a diode with 25 nm of Al 2 O 3 is $140. The ratio of EL intensity with the LP filter to EL intensity with the SP filter, LP/SP, varies between $3 and $35; it depends on Al 2 O 3 thickness and V S . Enhanced EL is attributed to the increase of the spontaneous emission rate of a dipole in a non-resonant optical microcavity. EL photons interact with the Ag and Al films to create surface plasmon polaritons (SPPs) at the metal-Al 2 O 3 interfaces. SPPs generate large electromagnetic fields in the filamentary region of the electroformed Al-Al 2 O 3 -Ag diode, which then acts as an optical microcavity. A model is proposed for electronic processes in electroformed Al-Al 2 O 3 -Ag diodes. V C 2013 AIP Publishing LLC. [http://dx.

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Surface plasmon assisted electron-photon interaction in metal-oxide-metal layered structures

Cited by 17 publications

References 74 publications

Surface plasmon polariton-assisted electron emission and voltage-controlled negative resistance of Al–Al2O3–Au diodes

Surface plasmon polariton-assisted electron emission and voltage-controlled negative resistance of Al–Al2O3–Au diodes

Preparation and characteristics of Cu/Al2O3/MgF2/Au tunnel junction

Optical microcavities and enhanced electroluminescence from electroformed Al-Al2O3-Ag diodes

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