Surface plasmon assisted high-performance photodetectors based on hybrid TiO₂@GaO_xN_y-Ag heterostructure

Abstract

In this work, we reported a high-performance-based ultraviolet-visible (UV-VIS) photodetector based on a TiO2@GaOxNy-Ag heterostructure. Ag particles were introduced into TiO2@GaOxNy to enhance the visible light detection performance of the heterojunction device. At 380 nm, the responsivity and detectivity of TiO2@GaOxNy-Ag were 0.94 A/W and 4.79 × 109 Jones, respectively, and they increased to 2.86 A/W and 7.96 × 1010 Jones at 580 nm. The rise and fall times of the response were 0.19/0.23 and 0.50/0.57 s, respectively. Uniquely, at 580 nm, the responsivity of fabricated devices is one to four orders of magnitude higher than that of the photodetectors based on TiO2, Ga2O3, and other heterojunctions. The excellent optoelectronic characteristics of the TiO2@GaOxNy-Ag heterojunction device could be mainly attributed to the synergistic effect of the type-Ⅱ band structure of the metal–semiconductor–metal heterojunction and the plasmon resonance effect of Ag, which not only effectively promotes the separation of photogenerated carriers but also reduces the recombination rate. It is further illuminated by finite difference time domain method (FDTD) simulation and photoelectric measurements. The TiO2@GaOxNy-Ag arrays with high-efficiency detection are suitable candidates for applications in energy-saving communication, imaging, and sensing networks.

Sonochemical CO2 Reduction to Acetamide and Liquid C2+ Oxygenates Using a Liquid Metal Gallium-Based Reductant

“…In contrast, GaOOH samples (produced by sonicating Ga in water without NH 4 OH or CO 2 ) show a significantly lower N content on the GaOOH particles (Figure S8), which is attributed to either dissolved N 2 /NO x reduction during sonication or ambient NO x adsorption on the solid-phase surface during the drying step. High-resolution TEM images of the GaOOH sample sonicated in 200 ppm NH 4 OH with CO 2 bubbling (Figure ) show lattice fringe spacings of 0.227, 0.27, and 0.248 nm attributed to GaOOH (200), Ga 2 O 3 (002), and GaN (101) crystal planes, respectively. , It should be mentioned that Ga x O y N z materials typically have a lattice fringe spacing of 0.25 nm, similar to GaN. , This experiment was repeated in the absence of CO 2 bubbling (Figure S9), and similar results were found, indicating that CO 2 does not play a role in the particle formation process but is only involved in the formation of liquid products.…”