Surface Plasmon Resonance-Coupled Photoluminescence and Resistive Switching Behavior of Pulsed Laser-Deposited Ag:SiC Nanocermet Thin Films

Kamakshi, Koppole; Sekhar, K. C.; Almeida, A.; Moreira, J. Agostinho; Gomes, M. J. M.

doi:10.1007/s11468-015-9915-4

Cited by 9 publications

(1 citation statement)

References 41 publications

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“…The local surface plasmon resonance (LSPR) of noble metal nanoparticles is an attractive plasmonic phenomenon, which recently has attracted extensive attention due to its unique photoresponsivity, including real-time monitoring capability and fast response. [28][29][30][31] More importantly, its wavelength absorption characteristic can be adjusted by the nanoparticle size, [32] which offers an opportunity to develop the multiwavelength light-controlled memristive device when introducing LSPR into memristive devices. In addition, Silicon/Silica-based materials find application as the RS layer in the field of two-terminal memristors thanks to its excellent dielectric property, no toxicity, and low cost.…”

Section: Introductionmentioning

confidence: 99%

Multi‐Wavelength‐Recognizable Memristive Devices via Surface Plasmon Resonance Effect for Color Visual System

Han

Shan

Lin

et al. 2023

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Photoelectric memristor has attracted many attentions thanks to their promising potential in optical communication chips and artificial vision systems. However, the implementation of an artificial visual system based on memristive devices remains a considerable challenge because most photoelectric memristors cannot recognize color. Herein, multi‐wavelength recognizable memristive devices based on silver(Ag) nanoparticles (NPs) and porous silicon oxide (SiOx) nanocomposites are presented. Rely on the effects of localized surface plasmon resonance (LSPR) and optical excitation of Ag NPs in SiOx, the set voltage of the device can be gradually reduced. Moreover, the current overshoot problem is alleviated to suppress conducting filament overgrowth after visible light irradiation with different wavelengths, resulting in diverse low resistance states (LRS). Taking advantage of the characteristics of controlled switching voltage and LRS resistance distribution, color image recognition is finally realized in the present work. X‐ray photoelectron spectroscopy (XPS) and conductive atomic force microscopy (C‐AFM) show that the light irradiation plays an important role on resistive switching (RS) process: the photo‐assisted Ag ionization leads to a significant reduction of set voltage and overshoot current. This work provides an effective method toward the development of multi‐wavelength‐recognizable memristive devices for future artificial color vision system.

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