2015
DOI: 10.1364/josab.32.001007
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Surface plasmon sorting and engineered dispersion curves using multilayer doped semiconductors

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Cited by 3 publications
(2 citation statements)
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“…Because of the low bandgap of InSb (E g = 170 meV), its intrinsic electron density at room temperature is about 10 16 cm −3 , which corresponds to the bulk plasma frequency (ω 2 p = ne 2 /ǫ 0 ǫ ∞ m * ) of ω p /2π ∼ 1.8 THz. Propagating and localized surface plasmons on InSb surfaces and microstructures have been studied actively in recent years [14][15][16][17][18][19][20] , and the potential for THz sensing and spectroscopy has been pointed out 21 .…”
Section: Introductionmentioning
confidence: 99%
“…Because of the low bandgap of InSb (E g = 170 meV), its intrinsic electron density at room temperature is about 10 16 cm −3 , which corresponds to the bulk plasma frequency (ω 2 p = ne 2 /ǫ 0 ǫ ∞ m * ) of ω p /2π ∼ 1.8 THz. Propagating and localized surface plasmons on InSb surfaces and microstructures have been studied actively in recent years [14][15][16][17][18][19][20] , and the potential for THz sensing and spectroscopy has been pointed out 21 .…”
Section: Introductionmentioning
confidence: 99%
“…Upon excitation, the signals collecting the fields over time in monitors were then Fourier transformed. The dispersion relations were illustrated by the resonance peaks in the spectral map[38].…”
mentioning
confidence: 99%