Surface potential–based analysis of ferroelectric dual material gate all around (FE‐DMGAA) TFETs

Mishra, Varun; Verma, Yogesh Kumar; Gupta, Santosh Kumar

doi:10.1002/jnm.2726

Cited by 19 publications

(5 citation statements)

References 41 publications

(59 reference statements)

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“…The surface potential variation with gate voltage for various values of t FE and t CH are plotted in Figure 5A,B, respectively, to evaluate the step-up conversion abilities of the device. 45 It is obtained for the given channel length (L = 100 nm). The plot has been obtained by solving Equations ( 7) and ( 22) simultaneously.…”

Section: Model Validation and Discussionmentioning

confidence: 99%

Surface potential and mobile charge based drain current modeling of double gate junctionless accumulation mode negative capacitance field effect transistor

Yadav,

Rewari,

Pandey

2023

Int J Numerical Modelling

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An analytical drain current model for double gate junctionless accumulation mode negative capacitance field effect transistor (DG‐JAM‐NC‐FET) has been developed, combining the merits of junctionless accumulation mode and negative capacitance effect such as fabrication feasibility, low power dissipation, and reduced degradation in mobility. The novelty manifested in our work is because of the incorporation of the JAM structure in ferroelectric‐based negative capacitance FET. The benefit of JAM over existing FETs is that it combines the benefits of the junctionless transistor (JLT) and conventional FETs. It avoids excessive parasitic resistance due to stronger doping in the source and drain areas, resulting in higher conductivity and better characteristics than JLT. An analytical surface potential and threshold voltage have been developed using Poisson's equation and Landau Khalatnikov's (L‐K) equation. The drain current is then determined by integrating the mobile charge using the Pao–Sah integral. Various critical parameters such as surface potential, gain, capacitance, mobile charge density, drain current, threshold voltage, subthreshold swing, transconductance, and the switching ratio have been assessed extensively by varying ferroelectric layer and channel layer thicknesses, respectively. The ON current increases with the increase in ferroelectric thickness due to the voltage amplification given by the ferroelectric layer, and the switching curve gets steeper. The analytical modeling is done in MATLAB, and its comparison is made with the TCAD numerical simulation. The obtained analytical results and the numerical simulation results correspond well.

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Section: Model Validation and Discussionmentioning

confidence: 99%

Surface potential and mobile charge based drain current modeling of double gate junctionless accumulation mode negative capacitance field effect transistor

Yadav,

Rewari,

Pandey

2023

Int J Numerical Modelling

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“…However, improving ON state current of TFET is one of the major challenges which still needs considerable research efforts. There are several reports on attaining high ON state current such as use of low band gap source material [8], [12], [13]; inclusion of ferroelectric material as gate-insulator [14]- [17], and so on. TFETs have bypassed the MOSFET as a biosensing device owing to its better sensitivity, low power consumption and better integration in system on chip [18]- [21].…”

Section: Dielectric Modulated Negative Capacitance Heterojunction Tfe...mentioning

confidence: 99%

Dielectric Modulated Negative Capacitance Heterojunction TFET as Biosensor: Proposal and Analysis

Mishra,

Agarwal,

Tiwari

et al. 2024

Silicon

Self Cite

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In this article, a label-free biosensor with a single cavity that uses a negative capacitance heterojunction charge-plasma-based tunnel FET (NC-HJ-CP-TFET) is presented and examined. To increase ONstate current, ferroelectric material (Si:HfO2) has been added to a stack with a gate insulator and low energy bandgap material (Si0.5Ge0.5). In terms of biosensing properties, comparisons have been made between NC-HJ-CP-TFET and Si-based NC-CP-TFET. The different bioanalytes employed in this work are Streptavidin (K = 2.1), APTES (K = 3.57), Bacteriophage (K = 6.3), Protein (K = 8), and Gelatin (K = 12). Benchmarking is done to compare prospective biosensors to literature that has already been reported. The maximum ON-state current sensitivity (SION), transconductance-based sensitivity (Sgm), ION/IOFF, and subthreshold swing (SS) obtained are 2×10 8 , 4×10 8 , 2.3×10 11 , and 17.9 mV/decade, respectively, for NC-HJ-CP-TFET with permittivity of K = 12 with fully filled nanogap of neutral bio-analyte..

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“…The underlying rationale behind this is the below par BTBT efficiency. In order to enhance the drive current and suppress the ambipolar current, several techniques has been reported-bandgap engineering, hetero-junction, hetero-dielectric, ferroelectric material incorporation as insulator and so forth have been utilized to take care of these issues [9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Temperature impact on device characteristics of charge plasma based tunnel FET with Si_0.5Ge_0.5 source

et al. 2021

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In this work, the impact of temperature is investigated on the electrical characteristics of charge plasma-based doping-less double gate tunnel FET (DL-DG-TFET) with a low bandgap source material i.e., Si0.5Ge0.5. The influence of temperature (from 250 K to 450 K) is analysed on several performance parameters of the device such as bandgap, threshold voltage, SS, switching current ratio, ID-VGS, ID-VDS, gate current. The small change in energy bandgap with temperature reflects that device is minimally dependent on temperature. Temperature impact is significant on the sub-threshold region of transfer characteristics due to SRH recombination and trap-assisted tunnelling current. Insignificant variation of gate current with temperature signifies the better reliability of the device. Further, temperature effect is observed on analog parameters such as cut-off frequency, gate capacitance, trans-conductance, output conductance, power delay product (PDP). The minimal variation of analog parameters with temperature assures application of device in high-temperatures.

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Surface potential–based analysis of ferroelectric dual material gate all around (FE‐DMGAA) TFETs

Cited by 19 publications

References 41 publications

Surface potential and mobile charge based drain current modeling of double gate junctionless accumulation mode negative capacitance field effect transistor

Surface potential and mobile charge based drain current modeling of double gate junctionless accumulation mode negative capacitance field effect transistor

Dielectric Modulated Negative Capacitance Heterojunction TFET as Biosensor: Proposal and Analysis

Temperature impact on device characteristics of charge plasma based tunnel FET with Si_0.5Ge_0.5 source

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Surface potential–based analysis of ferroelectric dual material gate all around (FE‐DMGAA) TFETs

Cited by 19 publications

References 41 publications

Surface potential and mobile charge based drain current modeling of double gate junctionless accumulation mode negative capacitance field effect transistor

Surface potential and mobile charge based drain current modeling of double gate junctionless accumulation mode negative capacitance field effect transistor

Dielectric Modulated Negative Capacitance Heterojunction TFET as Biosensor: Proposal and Analysis

Temperature impact on device characteristics of charge plasma based tunnel FET with Si0.5Ge0.5 source

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Temperature impact on device characteristics of charge plasma based tunnel FET with Si_0.5Ge_0.5 source