Surface Potential Investigation of Fullerene Derivative Film on Platinum Electrode under UV Irradiation by Kelvin Probe Force Microscopy Using a Piezoelectric Cantilever

Satoh, Nobuo; Katori, Shigetaka; Kobayashi, Kei; Watanabe, Shunji; Fujii, Tôru; Matsushige, Kazumi; Yamada, Hirofumi

doi:10.1380/ejssnt.2015.102

Cited by 3 publications

(1 citation statement)

References 30 publications

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“…This signal is then fed into a custom-built bias feedback circuit set for PI control. 19) The KFM method can thus map the surface potential, on the basis of Eq. ( 1), when applying (V dc = ΔΦ = V CPD ) (i.e., so as to cancel ΔΦ), via the analog=digital converter of the PC.…”

Section: Methodsmentioning

confidence: 99%

Investigation of the depletion layer by scanning capacitance force microscopy with Kelvin probe force microscopy

Uruma

Satoh

Yamamoto

2016

Jpn. J. Appl. Phys.

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We have developed a scanning probe microscope (SPM) that combines atomic force microscopy (AFM) with both Kelvin probe force microscopy (KFM — to measure the surface potential) and scanning capacitance force microscopy (SCFM — to measure the differential capacitance). The surface physical characteristics of a commercial Si Schottky barrier diode (Si-SBD), with and without an applied reverse bias, were measured over the same area by our AFM/KFM/SCFM system. We thus investigated the discrete power device by calculating the depletion-layer width and drawing an energy-band diagram.

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Section: Methodsmentioning

confidence: 99%

Investigation of the depletion layer by scanning capacitance force microscopy with Kelvin probe force microscopy

Uruma

Satoh

Yamamoto

2016

Jpn. J. Appl. Phys.

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Development of atomic force microscopy combined with scanning electron microscopy for investigating electronic devices

et al. 2019

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Atomic force microscopy (AFM) was combined with scanning electron microscopy (SEM) to investigate electronic devices. In general, under observation using an optical microscope, it is difficult to position the cantilever at an arbitrary scan area of an electronic device with a microstructure. Thus, a method for positioning the cantilever is necessary to observe electronic devices. In this study, we developed an AFM/SEM system to evaluate an electronic device. The optical beam deflection (OBD) unit of the system was designed for a distance between the SEM objective lens and a sample surface to be 2 cm. A sample space large enough to place an actual device was created, using a scan unit fabricated with three tube scanners. The scanning ranges of the scan unit are 21.9 µm × 23.1 µm in the XY plane and of 2.5 µm for the Z axis. The noise density in the OBD unit was measured to be 0.29 pm/Hz0.5, which is comparable to noise density values reported for commercial AFM systems. Using the electron beam of SEM, the electron beam induced current (EBIC) is generated from a p–n junction of a semiconductor. Using the EBIC, the cantilever was positioned at the p–n-junction of a Si fast recovery diode (FRD). In addition, scanning capacitance force microscopy (SCFM) and Kelvin probe force microscopy (KFM) were combined with the AFM/SEM system. The SCFM and KFM signals were in qualitative agreement with the expected carrier density distribution of the p and n-regions of the Si-FRD.

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Nanoscale investigation of bulk heterojunction organic solar cell by scanning capacitance force microscopy

Mochizuki

Satoh

Katori

2018

Jpn. J. Appl. Phys.

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We developed a frequency-modulation atomic force microscopy (FM-AFM) system combined with Kelvin probe force microscopy (KFM) and scanning capacitance force microscopy (SCFM). Using the developed system, we investigated the surface structure and electrical characteristics of a bulk heterojunction (BHJ) sample consisting of a mixture of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and poly(3-hexylthiophene) (P3HT). The BHJ structure consisted of PCBM and P3HT molecules. These materials are often used as the active and charge transport layers in an organic solar cell, respectively. The results suggest that we succeeded in visualizing the phase separation in the BHJ sample using SCFM measurements. We illustrated the energy band diagrams from the KFM results and showed that band bending occurs from the organic material side at the interface with the indium–tin oxide substrate. Furthermore, the KFM and SCFM results suggested that charge separation occurs in the BHJ structure.

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Surface Potential Investigation of Fullerene Derivative Film on Platinum Electrode under UV Irradiation by Kelvin Probe Force Microscopy Using a Piezoelectric Cantilever

Cited by 3 publications

References 30 publications

Investigation of the depletion layer by scanning capacitance force microscopy with Kelvin probe force microscopy

Investigation of the depletion layer by scanning capacitance force microscopy with Kelvin probe force microscopy

Development of atomic force microscopy combined with scanning electron microscopy for investigating electronic devices

Nanoscale investigation of bulk heterojunction organic solar cell by scanning capacitance force microscopy

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