Surface processes in OMVPE – the frontiers

Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant properties

“…Tellurium, as a surfactant, can influence the layer composition by slightly unbalancing the incorporation of gallium and indium into the crystal lattice [1,2]. Additionally, if high dopant concentrations are pursued with a rather big atom such as tellurium, lattice distortion may appear, which can be interpreted as a variation in composition when analysed by XRD.…”

Surfactant effect of Sb on GaN growth

“…A comparison of the effect of Group V surfactants on the metal organic vapor phase epitaxy (MOVPE) of GaInP shows the thermodynamic influence of Sb and Bi to be more distinct than that of As, with Sb replacing surface P dimer, and Bi increasing the step growth velocity [13]. Similarly, As has been shown to induce thermodynamically driven surface reconstructions on GaN(0 0 0 1) [14].…”

Development and current status of organometallic vapor phase epitaxy

“…3 [41]. The TESb partial pressure is normalized by the total group III precursor partial pressure, since both Sb and the group III elements are relatively non-volatile.…”

“…The larger spacing of the Sb dimers Degree of order for GaInP layers grown by OMVPE plotted versus the surfactant/III ratio in the vapor. Data are for Bi (E), Sb (&), and As (m) (after Stringfellow et al[41]). …”

“…The SPA spectra were obtained in situ at 620 C, the growth temperature (after Stringfellow et al[41]). …”