Surface properties of AlN and Al x Ga1−x N epitaxial layers characterized by angle resolved X-ray photoelectron spectroscopy

Yang, Hui; Zhang, Xiong; Wang, Shuchang; Zhu, Min; Cui, Yiping; Dai, Ning

doi:10.1007/s10854-014-2487-9

Cited by 6 publications

(2 citation statements)

References 15 publications

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“…Figure 1(d) depicts the XPS high-resolution spectra of Al 2p centered at binding energy 73.8 eV corresponds to the Al-N bond present in the AlN active layer. Figure 1(e) displays the in-depth analysis of N 1s spectra consisting of three sub-peaks (A, B, and C) conforming to the N-Al-O, N-Al, and N-N bonds at the binding energies ∼398 eV, ∼396.6 eV, and ∼395.8 eV, respectively [21,30,31]. It is seen that most of the nitrogen is found to be bonded with Al and form the AlN compound.…”

Section: Resultsmentioning

confidence: 98%

Functional bipolar resistive switching in AlN/Ni–Mn–In based magnetoelectric heterostructure

Kumar

Kaur

2021

Nanotechnology

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This report explores the influence of temperature on resistive switching characteristics in the AlN/Ni-Mn-In magnetoelectric (ME) heterostructure-based resistive random access memory (ReRAM) device. The fabricated Cu/AlN/Ni-Mn-In/Si device exhibits a sharp transition from a high resistance state (HRS) to low resistance state (LRS) at a SET voltage. The rupture of the filament from its weakest point at a RESET voltage turn the device back to its HRS. The stable bipolar resistive switching behavior is described by the current-voltage (I-V ) characteristic. The HRS and LRS are explained by the trap-controlled space charge limited conduction mechanism and a well-known Ohmic conduction mechanism, respectively. The temperature-dependent resistance has been observed to further confirm the conduction mechanism in HRS and LRS. The current conduction in LRS is explained by an analytical model based on copper metallic filament formation via Cu + migration from the top to the bottom electrode. A significant change in the SET voltage has been observed with the decrease in temperature. This variation in the SET voltage is explained via strain-mediated coupling in interfacially connected AlN/Ni-Mn-In ME heterostructure. The fabricated device displays an appreciable OFF/ON ratio of the order ∼3×10 3 with good endurance and retention of ∼1000 cycles and ∼900 s, respectively. A slight variation (<40%) in SET and RESET voltages has been observed for total endurance cycles. This study demonstrates the importance of ME heterostructure for futuristic tuneable ReRAM applications.

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Section: Resultsmentioning

confidence: 98%

Functional bipolar resistive switching in AlN/Ni–Mn–In based magnetoelectric heterostructure

Kumar

Kaur

2021

Nanotechnology

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“…Compared with other III-nitrides, it has the widest direct band gap of 6.2 eV at room temperature, high stability, high volume resistivity (10 11 -10 13 ), high thermal conductivity (285 W mK −1 ), high breakdown field (1.2-1.8 × 10 6 V cm −1 ) [6][7][8][9][10][11][12][13]. These characteristics make AlN have a wide range of applications, in optoelectronic and acoustoelectronic devices, such as surface wave and bulk acoustic wave devices [14][15][16], field emission displays [17], light-emitting diodes [18] and laser diodes [19][20][21][22][23][24]. AlN is widely used as a buffer layer for epitaxial growth of gallium nitride/aluminum gallium nitride [25,26].…”

Section: Introductionmentioning

confidence: 99%

Optical and structural properties of AlN thin films deposited on different faces of sapphire substrates

Yin¹,

Zhou²,

Li³

et al. 2021

Semicond. Sci. Technol.

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We report the comprehensive spectroscopic results of AlN thin films deposited on the A-, R- and C-surfaces of sapphire substrates by radio frequency magnetron sputtering. The optical and structural properties of the epitaxial-grown AlN films were characterized using various techniques of high-resolution x-ray diffraction spectroscopy, x-ray photoelectron spectroscopy, Raman scattering spectroscopy, spectroscopic ellipsometry and associated analytical tools. Our large number of measurement results clearly show that sapphire substrates of different polarities have effects on the surface roughness, dislocation density, grain size, microstrain, and surface oxygen binding capacity of the film grown on its surface. The results obtained from Ellipsometry measurements show that the thickness, band gap and roughness of AlN films grown on C-plane sapphire are the smallest among the three samples. After careful analyses of the variable temperature Raman spectra, as the temperature rises from 80 K to 800 K, the AlN film has always exhibited tensile stress. In the same temperature range, the tensile stress of the AlN film grown on the C-plane sapphire has the greatest effect with temperature. The lifetime of E2 (high) phonons gradually decays with the increase of temperature.

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Effective ways to enhance the performance of n-MoS2/p-CuO heterojunction based self-powered photodetectors

Kumar

Yadav

Devi³

et al. 2023

Solar Energy Materials and Solar Cells

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Surface properties of AlN and Al x Ga1−x N epitaxial layers characterized by angle resolved X-ray photoelectron spectroscopy

Cited by 6 publications

References 15 publications

Functional bipolar resistive switching in AlN/Ni–Mn–In based magnetoelectric heterostructure

Functional bipolar resistive switching in AlN/Ni–Mn–In based magnetoelectric heterostructure

Optical and structural properties of AlN thin films deposited on different faces of sapphire substrates

Effective ways to enhance the performance of n-MoS2/p-CuO heterojunction based self-powered photodetectors

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