Surface reaction during the argon ion sputter cleaning of surface oxidized crystalline silicon (111)

Unveiling the Hybrid n-Si/PEDOT:PSS Interface

“…Because the Si 2s signal intensity from the bare silicon references is significantly higher than from the buried silicon, they show a higher signal-to-noise ratio. As expected, the silicon substrate with an H-passivated surface shows essentially only one peak related to elemental silicon (Si 0 ). , The 2 weeks in ambient air oxidized silicon wafer shows a distinct shoulder related to silicon oxide on the surface . The peak is located at ∼3.6 eV higher E bind , corresponding well to the reported positions for silicon dioxide (Si 4+ ) that dominates native oxide formation on bare H-terminated silicon surfaces .…”

Coverage of palladium by silicon oxide during reduction in H2 and complete oxidation of methane

“…The silica layer covering the surface might consist of silicon atoms bound to various oxygen atoms. Bekkay et al [41] reported nonstoichiometric oxide formation and the silicon atoms coordinated to one and four oxygen atoms were characterized by the Si 2s peaks at 150.2 and 153.9 eV, respectively. In our case the Si 2s peak is broad and the state of Si could not be unambiguously identified because the signal to noise level on the Si 2s peak was low.…”

XPS and resistive studies on thin films of a copper(II)‐based coordination polymer deposited on functionalized interdigital electrodes

“…In the X‐ray photoelectron investigations of this surface a binding energy of the S2s electrons could be detected at 228.17 eV (FWHM = 2.0229 eV) which is characteristic for the sulfur species in 3. The full list of the obtained XPS data is shown in Table (the Ar2p 3/2 and Si2s signals of the substrate were used for the calibration) . After the coating with 2 and prior to the silanization, a small signal indicating the presence of some impurities on the SiO 2 substrate was found in the C1s region.…”