Surface reaction during the argon ion sputter cleaning of surface oxidized crystalline silicon (111)

Coordination-resolved local bond contraction and electron binding-energy entrapment of Si atomic clusters and solid skins

“…[1][2][3][4][5][6] It has been recognized that these unusual properties arise from the interaction between undercoordinated atoms, 7,8 but a systematic characterization and consistent understanding of the energetic behavior of the core and the valence electrons are still lacking though the energy shift of the valence band and the 2p core-level induced by atomic undercoordination at the (100) and the (111) surfaces and in the atomic clusters of Si have been intensively investigated. [9][10][11][12][13][14] Recent investigations using a free-electron laser vacuum ultraviolet and x-ray photoelectron spectroscopy (XPS) of size-selected clusters revealed a linear dependence of the energy shifts of both the 2p and the valence bands on the inverse of particle size. [15][16][17][18] XPS measurements also revealed that the spectral intensity of the high-energy (closing to Fermi level, E F ) component increases with the incident beam energy or with decreasing the angle between the incident beam and the surface normal, which indicates that this peak corresponds to the bulk (B) contribution.…”

Unveiling the Hybrid n-Si/PEDOT:PSS Interface

“…As expected, the silicon substrate with an H-passivated surface shows essentially only one peak related to elemental silicon (Si 0 ). 37,38 The 2 weeks in ambient air oxidized silicon wafer shows a distinct shoulder related to silicon oxide on the surface. 39 The peak is located at ∼3.6 eV higher E bind , corresponding well to the reported positions for silicon dioxide (Si 4+ ) 37 that dominates native oxide formation on bare Hterminated silicon surfaces.…”

“…37,38 The 2 weeks in ambient air oxidized silicon wafer shows a distinct shoulder related to silicon oxide on the surface. 39 The peak is located at ∼3.6 eV higher E bind , corresponding well to the reported positions for silicon dioxide (Si 4+ ) 37 that dominates native oxide formation on bare Hterminated silicon surfaces. 40 SiO x suboxide (x < 2) signals are located between this position and the elemental silicon peak.…”

“…40 SiO x suboxide (x < 2) signals are located between this position and the elemental silicon peak. 37,39 A corresponding signal is hardly detectable for the a Open-circuit voltage (V OC ), short-circuit current (J SC ), fill factor (FF), and the power conversion efficiency (PCE) are extracted from the illuminated J−V curves in Figure 4a. natively oxidized Si substrate (also compare the Si 1s core level spectra in Supporting Information Figure S3).…”

“…At approximately 150 eV, the peak related to the Si 2s core level is visible. 2 The thicker, as-cast polymer layer shows only a very weak Si 2s signal, while after the removal of excess PSS by DMSO post-treatment the signal from the silicon substrate is clearly visible. At the same time, no Si 1s signal can be observed (cf.…”