Surface Reaction Film Formation by Si2 H 6 Transfer at Molecular Flow

Abstract

High-rate silicon epitaxial growth of 1.1 ~m/min has been achieved at a substrate temperature of 750~ by using a new source gas supply system, such as a free-jet molecular flow expanding into ultra-high vacuum. Film formation is thought to be carried out by the surface reaction of adsorbed source gas molecules, without production of microparticles by any accompanying vapor phase reaction, which would degrade film qualities. It was found that the effect of electron-hole excitation in the substrate with a xenon lamp is also involved in the high-rate growth. The newly developed system is cleaningfree, because there is no deposition of reaction by-products on the inner surface of the chamber wall.

<title>Laser-enhanced CVD for low-temperature Si epitaxy</title>

“…A QIJESTEK ArF excimer laser beam operating at 80 Hz, is passed through the chamber via He-purged quartz windows. The wafers used are lightly boron-doped (100) Si with resistivities of [10][11][12][13][14][15] ohm-cm. A 1000 A polysilicon/1000 A oxide stack is deposited by Low Pressure Chemical Vapor Deposition (LPCVD), photolithographically patterned and etched to retain the stack over a quarter of the wafer to enable measurements of deposited film thickness by effipsometric techniques.…”

Native Oxide Growth on Silicon Micro-Pillars

“…In addition, increasing the surface area of Si wafers by surface texturing or etching nanostructures enhances the growth of native oxides due to the increase of the area in contact with the atmosphere. In order to suppress oxide growth, the use of a nitrogen gas tunnel connecting process equipment and an ultrapure water rinsing vessel sealed by nitrogen gas have been proposed [16][17].…”