1984
DOI: 10.1016/s0022-0728(84)80085-6
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Surface recombination at semiconductor electrodes

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Cited by 170 publications
(38 citation statements)
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“…As the electrode potential becomes more negative, the magnitude of the photocurrent responses increases, in agreement with the data shown in Figure 2 B. From a phenomenological point of view, the photocurrent decay and overshoot upon light interruption resemble the behavior observed for single‐crystal photoelectrodes in the presence of interfacial recombination 6a. 15 However, a closer examination of the photocurrent transient reveals that the magnitude of the photocurrent decay in the on‐transient is significantly larger than photoanodic responses in the off‐transient.…”
Section: Resultssupporting
confidence: 87%
“…As the electrode potential becomes more negative, the magnitude of the photocurrent responses increases, in agreement with the data shown in Figure 2 B. From a phenomenological point of view, the photocurrent decay and overshoot upon light interruption resemble the behavior observed for single‐crystal photoelectrodes in the presence of interfacial recombination 6a. 15 However, a closer examination of the photocurrent transient reveals that the magnitude of the photocurrent decay in the on‐transient is significantly larger than photoanodic responses in the off‐transient.…”
Section: Resultssupporting
confidence: 87%
“…It was recognized that surface states play a dominant role in electrochemical reactions at extrinsic crystalline semiconductor electrodes [2][3][4][5]. In a DSC, low doped anatase-TiO 2 nanoparticles ca.…”
Section: Introductionmentioning
confidence: 99%
“…We have presented calculations of the effect of surface states in DSC in steady state [16][17][18], and we have also characterized quite generally the dynamics of traps in terms of Impedance Spectroscopy (IS) [19,20]. However, the combination of trapping and charge transfer in surface states introduces additional features in the dynamics [2][3][4][5]. IS of charge transfer via surface states has been mentioned sometimes in the DSC field but the traps dynamics was not explicitly described [21,22].…”
Section: Introductionmentioning
confidence: 99%
“…There is a competition between diffusion and gas evolution. Hydrogen absorption has been previously reported for p-type semiconductor electrodes (GaP [22] and Si [23] ) under illumination. However, the amount of hydrogen stored was many orders of magnitude lower (< 10 14 cm À2 ) than that found for SiC in the present study.…”
mentioning
confidence: 88%