Surface Recombination Noise in InAs/GaSb Superlattice Photodiodes

Tansel, Tunay; Kutluer, Kutlu; Muti, Abdullah; Salihoglu, Omer; Aydınlı, A.; Turan, Raşit

doi:10.7567/apex.6.032202

Cited by 6 publications

(4 citation statements)

References 18 publications

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“…Getting back to figure 1 and D1 diode data, we can conclude that majority carriers up to 195 K are most probably holes and electrons above that temperature. For temperatures lower than 135 K, J dark is dominated by surface or near-suface effects, especially for low voltages [7,18,34]. Next, returning to figure 1 and considering 160T210 K, it can be seen that changing the reverse voltage by the constant step of 0.2 V from −0.3 to −0.9 V (except for 160 and 170 K; see figure 1) results in a proportional increase of E a .…”

Section: Thermal Analysis Of Dark Currentmentioning

confidence: 92%

Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices

Wróbel

Ciura

Motyka

et al. 2015

Semicond. Sci. Technol.

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In this report, we present results of an experimental investigation of a near mid-gap trap energy level in InAs 10 ML /GaSb 10 ML type-II superlattices. Using thermal analysis of dark current, Fourier transform photoluminescence and low-frequency noise spectroscopy, we have examined several wafers and diodes with similar period design and the same macroscopic construction. All characterization techniques gave nearly the same value of about 140 meV independent of substrate type. Additionally, photoluminescence spectra show that the transition related to the trap centre is temperature independent. The presented methodology for thermal analysis of dark current characteristics should be useful to easily estimate the position of deep energy levels in superlattice photodiodes.

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Section: Thermal Analysis Of Dark Currentmentioning

confidence: 92%

Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices

Wróbel

Ciura

Motyka

et al. 2015

Semicond. Sci. Technol.

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“…The smaller activation energies from both samples can be accounted for by the surface leakage current [19] and acceptor states in GaSb [20]. It should also be noted here that (i) some shallow impurities (donors or acceptors) in either the bulk InAs or bulk GaSb were predicted to become deep traps in a thin-layer SL [21] and (ii) un-passivated diode surfaces are known to become surface recombination centers [22] and limit the current through the diode. The extracted activation energies were also verified for different voltage values and polarities (not shown here).…”

Section: Resultsmentioning

confidence: 77%

Comparative evaluation of InAs/GaSb superlattices for mid infrared detection: p–i–n versus residual doping

Korkmaz

Kaldirim

Arıkan

et al. 2015

Semicond. Sci. Technol.

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We report on the opto-electronic characterization of an InAs/GaSb superlattice (SL) midwave infrared p-i-n photodetector structure (pin-SL) in comparison with the same structure with no intentional doping (i-SL). Both structures were grown on an n-GaSb substrate using molecular beam epitaxy. The nominally undoped structure (i-SL) presented p-i-n like behavior and showed a photovoltaic mode photoresponse due to the residual doping and native defects in this material system. For ∼77 K operation, 0.76 and 0.11 A W -1 responsivity values were obtained at 4 μm from the pin-SL and i-SL structures, respectively. Activation energy analysis showed that the recombination current was dominant in both structures but different recombination centers were involved. The same i-SL structure was also grown on a semi-insulating (SI)-GaAs substrate to study the contribution of the substrate to the carrier density in the SL layers. Temperature dependent Hall effect measurements showed that the nominally undoped structure presented both n-type and p-type conductivities; however, the temperature at which the carrier type switched polarity was observed to be at higher values when the i-SL structure was grown on the SI-GaAs substrate. In addition, a higher carrier density was observed for i-SL on the GaSb substrate than on the GaAs substrate.

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“…The QEs reach the peak values of 42% and 37% at 5 μm for passivated and unpassivated samples, respectively. Moreover, it shows that SiO 2 passivation increases the responsivity as well as the quantum-efficiency values, which is attributed to the effective suppression of surface leakage currents [21,22]. These values are impressive for a short period superlattice with only 146 nm thick i-region with a single-pass and no antireflection coating.…”

Section: Resultsmentioning

confidence: 90%

High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers

et al. 2013

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We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave functions towards the GaSb/InAs interface to perform strong overlap under reverse bias. Experimental results show that, with only 20 periods of intrinsic layers, dark current density and dynamic resistance at -50 mV bias are measured as 6×10-3 A/cm2 and 148 ωcm2 at 77K, respectively. Under zero bias, high spectral response of 1.2A/W is obtained at 5 μm with 50% cut-off wavelengths (λc) of 6 μm. With this new design, devices with only 146 nm thick i-regions exhibit a quantum efficiency of 42% at 3 μm with front-side illimunation and no anti-reflection coatings. © 2013 SPIE

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Surface Recombination Noise in InAs/GaSb Superlattice Photodiodes

Cited by 6 publications

References 18 publications

Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices

Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices

Comparative evaluation of InAs/GaSb superlattices for mid infrared detection: p–i–n versus residual doping

High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers

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