Surface reconstructions of cubic gallium nitride (001) grown by radio frequency nitrogen plasma molecular beam epitaxy under gallium-rich conditions

Haider, Muhammad B.; Yang, Rong; Constantin, Costel; E, Lu; Smith, Arthur R.; Albrithen, Hamad

doi:10.1063/1.2356604

Cited by 3 publications

(3 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…21,22 During growth, reflection high-energy electron diffraction ͑RHEED͒ using 20 keV electron energy is used to monitor the surface structure and the in-plane lattice parameter. The MgO substrate is first cleaned with acetone and isopropanol, then loaded into the MBE chamber and heated up to 1000°C for 30 min under nitrogen plasma.…”

Section: Methodsmentioning

confidence: 99%

Growth of epitaxial iron nitride ultrathin film on zinc-blende gallium nitride

Pak

Lin

Wang

et al. 2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

The authors report the growth of iron nitride on zinc-blende gallium nitride using molecular beam epitaxy. First, zinc-blende GaN is grown on a magnesium oxide substrate having ͑001͒ orientation; second, an ultrathin layer of FeN is grown on top of the GaN layer. In situ reflection high-energy electron diffraction is used to monitor the surface during growth, and a well-defined epitaxial relationship is observed. Cross-sectional transmission electron microscopy is used to reveal the epitaxial continuity at the gallium nitride-iron nitride interface. Surface morphology of the iron nitride, similar to yet different from that of the GaN substrate, can be described as plateau valley. The FeN chemical stoichiometry is probed using both bulk and surface sensitive methods, and the magnetic properties of the sample are revealed.

show abstract

Section: Methodsmentioning

confidence: 99%

Growth of epitaxial iron nitride ultrathin film on zinc-blende gallium nitride

Pak

Lin

Wang

et al. 2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

show abstract

“…2 are RHEED patterns of ScGaN growth on sapphire(0001) [10]. For these values of x = 0.54 and 0.78, the RHEED pattern is similar to that of ScN(111) along [1][2][3][4][5][6][7][8][9][10] but with also the development of a ring-like structure, indicating polycrystalline ScGaN (111)-oriented grains. Comparing this to the growth at x = 0.5 and 0.75 on MgO(001) [see Fig.…”

Section: Methodsmentioning

confidence: 87%

“…zinc-blende bonding structure with a lattice constant of a c-GaN = 0.452 nm[1,2]. On the other hand, scandium nitride (ScN) is a semiconductor with a direct band gap of eV…”

mentioning

confidence: 99%

Lattice Parameter Variation in ScGaN Alloy Thin Films on MgO(001) Grown by RF Plasma Molecular Beam Epitaxy

et al. 2009

Self Cite

View full text Add to dashboard Cite

We present the structural and surface characterization of the alloy formation of scandium gallium nitride ScxGa1-xN(001)/MgO(001) grown by radio-frequency molecular beam epitaxy over the Sc range of x = 0-100%. In-plane diffraction measurements show a clear face-centered cubic surface structure with single-crystalline epitaxial type of growth mode for all x; a diffuse/distinct transition in the surface structure occurs at near x = 0.5. This is consistent with out-of-plane diffraction measurements which show a linear variation of perpendicular lattice constant for x = 0 to 0.5, after which the out-of-plane lattice parameter becomes approximately constant. The x = 0.5 transition is interpreted as being related to the cross-over from zinc-blende to rock-salt structure.

show abstract

Self‐organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates

Ishii

Yagi

Yaguchi

2016

Physica Status Solidi (b)

View full text Add to dashboard Cite

Cubic zincblende InN (c‐InN) nanoscale dot arrays are grown on cubic GaN (c‐GaN) by RF‐molecular beam epitaxy using MgO (001) vicinal substrates oriented 3.5° toward [110]. The obtained dot arrays have longer ordering length compared with those grown using conventional on‐axis (just) substrates. The c‐GaN underlayer grown on the vicinal substrate exhibits a single‐domain crystalline structure, while that grown on the just substrate is a mixture of two orthogonal crystalline domains. The change in the c‐GaN domain structure leads to the enlarged domain size and lower density of domain boundaries on the c‐GaN (001) surface in [1–10]. The longer ordering length of the c‐InN dot on the vicinal substrates is reflected by the decrease in the c‐GaN domain boundary that disrupts the lateral ordering of the dot arrays. Atomic force microscope image of c‐InN dots grown on a single‐domain c‐GaN. The sample was fabricated using a MgO (001) vicinal substrate.

show abstract

Surface reconstructions of cubic gallium nitride (001) grown by radio frequency nitrogen plasma molecular beam epitaxy under gallium-rich conditions

Cited by 3 publications

References 18 publications

Growth of epitaxial iron nitride ultrathin film on zinc-blende gallium nitride

Growth of epitaxial iron nitride ultrathin film on zinc-blende gallium nitride

Lattice Parameter Variation in ScGaN Alloy Thin Films on MgO(001) Grown by RF Plasma Molecular Beam Epitaxy

Self‐organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates

Contact Info

Product

Resources

About