Surface residual stress in amorphous SiO2 insulating layer on Si substrate near a Cu through-silicon via (TSV) investigated by nanoindentation

Kim, Hangeul; Jeon, Hansol; Lee, Dong-Ju; Kim, Ju‐Young

doi:10.1016/j.mssp.2021.106153

Cited by 15 publications

(6 citation statements)

References 48 publications

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“…The residual stress inner SiO 2 is 84.75 MPa, under thermal cycling, which is less than the stress as fabricated at 225.61 MPa and the annealed stress at 281.15 MPa. The residual stress of inner Si, as fabricated, is 320 MPa, which is similar to the stress measured by the nanoindentation test in [17]. The residual stress in Si is mainly influenced by the stress in TSV-Cu.…”

Section: Residual Stress Distributionsupporting

confidence: 75%

“…However, the local residual stress of TSV-Cu cannot be obtained using the wafer curvature method. In addition, the characterization of local residual stress on TSV-Cu surface can be accomplished via Raman spectroscopy, X-ray microdiffraction, secondharmonic spectroscopy, and the nanoindentation test [12][13][14][15][16][17][18]. Nevertheless, the above characterization methods have strict requirements regarding the material surface.…”

Section: Introductionmentioning

confidence: 99%

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Correlations between Microstructure and Residual Stress of Nanoscale Depth Profiles for TSV-Cu/TiW/SiO2/Si Interfaces after Different Thermal Loading

et al. 2023

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In this paper, the residual stresses with a nanoscale depth resolution at TSV-Cu/TiW/SiO2/Si interfaces under different thermal loadings are characterized using the ion-beam layer removal (ILR) method. Moreover, the correlations of residual stress, microstructure, and the failure modes of the interfaces are discussed. The residual stresses at the interfaces of TSV-Cu/TiW, TiW/SiO2, and SiO2/Si are in the form of small compressive stress at room temperature, then turn into high-tensile stress after thermal cycling or annealing. In addition, the maximum residual stress inside the TSV-Cu is 478.54 MPa at room temperature, then decreases to 216.75 MPa and 90.45 MPa, respectively, after thermal cycling and annealing. The microstructural analysis indicates that thermal cycling causes an increase in the dislocation density and a decrease in the grain diameter of TSV-Cu. Thus, residual stress accumulates constantly in the TSV-Cu/TiW interface, resulting in the cracking of the interface. Furthermore, annealing leads to the cracking of more interfaces, relieving the residual stress as well as increasing the grain diameter of TSV-Cu. Besides this, the applicability of the ILR method is verified by finite element modeling (FEM). The influence of the geometric errors of the micro-cantilever beam and the damage to the materials introduced by the focused ion beam (FIB) in the experimental results are discussed.

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Section: Residual Stress Distributionsupporting

confidence: 75%

Section: Introductionmentioning

confidence: 99%

Correlations between Microstructure and Residual Stress of Nanoscale Depth Profiles for TSV-Cu/TiW/SiO2/Si Interfaces after Different Thermal Loading

et al. 2023

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“…As the O2 flux increases, the hardness of the coatings decreases, causing a reduction in the scratch resistance. It should be noted that the hardness of the Si/O-DLC coating with a small amount of O doping is comparable to that of SiO 2 , which is widely used in insulating materials [28]. However, as the O 2 flux increases from 2 sccm to 6 sccm, the hardness and elastic modulus of the Si/O-DLC coatings decrease from approximately 10 GPa to 6.6 GPa and from approximately 110 GPa to 58.5 GPa, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…The hardness and elastic modulus of the pure Si-DLC coating (the O2 flux = 0 sccm) are approximately 10 GPa and 151 GPa, respectively. As a small amount of O is added (the O2 flux = 2 sccm), the hardness of the coatings is almost maintained at approximately 10 GPa.It should be noted that the hardness of the Si/O-DLC coating with a small amount of O doping is comparable to that of SiO2, which is widely used in insulating materials[28]. However, as the O2 flux increases from 2 sccm to 6 sccm, the hardness and elastic modulus of the Si/O-DLC coatings decrease from approximately 10 GPa to 6.6 GPa and from approximately 110 GPa to 58.5 GPa, respectively.…”

mentioning

confidence: 96%

Structure and Property of Diamond-like Carbon Coating with Si and O Co-Doping Deposited by Reactive Magnetron Sputtering

Dai

Wang

2023

J. Compos. Sci.

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In this paper, diamond-like carbon (DLC) coatings with Si and O co-doping (Si/O-DLC) were deposited by reactive magnetron sputtering using a gas mixture of C2H2, O2 and Ar to sputter a silicon/graphite splicing target. The O content in the Si/O-DLC coatings was controlled by tuning the O2 flux in the gas mixture. The composition, chemical bond structure, mechanical properties and tribological behavior of the coatings were investigated by X-ray photoelectron spectroscopy, Fourier infrared spectrometer, Raman spectroscopy, nanoindentation, a scratch tester and a ball-on-disk tribometer. The electrical resistivity of the Si/O-DLC coatings was also studied using the four-point probe method. The results show that the doping O tends to bond with Si to form a silicon–oxygen compound, causing a decrease in the sp3 content as well as the hardness of the coatings. The tribological performance of the coatings can be improved due to the formation of the silicon–oxygen compound, which can effectively reduce the friction coefficient. In addition, the insulating silicon–oxygen compound is doped into the C-C network structure, significantly improving the surface resistivity of the DLC coating with a low sp3 content. The Si/O-DLC coatings with good mechanical properties, tribological performance and electrical insulation properties might be used as protection and insulation layers for microelectronics.

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“…Through Silicon Via (TSV) is a through hole in the z-axis direction on a silicon substrate, and the conductive material copper is filled in the through hole, thereby realizing the interconnection between different functional chips. 1,2 Compared with the previous technology, TSV can make the chips have the highest stacking density in the threedimensional direction, the shortest interconnection between chips, and the smallest external size, thereby greatly improving the signal transmission speed of the chip and reducing the power consumption. It is the most advanced electronic packaging technology.…”

mentioning

confidence: 99%

Effect of Ammonium Citrates as an Auxiliary Complexing Agent in TSV Copper Film CMP

Zheng

Wang

et al. 2022

ECS J. Solid State Sci. Technol.

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The removal rate of slurry is the key factor in chemical mechanical planarization (CMP) for through-silicon vias copper film. Currently, in the study of slurry, the synergistic effect of some additives can produce the effect of “1+1＞2”. It is widely used in semiconductor and microelectronics industries to develop novel slurry. Here, ammonium citrates served as a crucial chemical additive in through silicon via Cu film slurries. Through electrochemical measurements, X-ray photoelectron spectroscopy, ultraviolet-visible, and LSCM tests, it was revealed that ammonium citrates could react with cupric ions to form a stable water-soluble Cu-ammonium citrates complex, which can accelerate the chemical dissolution of Cu surface during the CMP process, and it was also found that the complexing effect was weaker than glycine. Moreover, various tests on Cu wafers showed that a high Cu removal rate and ideal surface quality could be realized when ammonium citrates were used as an auxiliary complexing agent in glycine-based Cu film slurries. The purpose of the study is to find an auxiliary chemical additive that can improve the performance of slurry in the manufacturing process of Cu film and other materials used in integrated circuits.

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Surface residual stress in amorphous SiO2 insulating layer on Si substrate near a Cu through-silicon via (TSV) investigated by nanoindentation

Cited by 15 publications

References 48 publications

Correlations between Microstructure and Residual Stress of Nanoscale Depth Profiles for TSV-Cu/TiW/SiO2/Si Interfaces after Different Thermal Loading

Correlations between Microstructure and Residual Stress of Nanoscale Depth Profiles for TSV-Cu/TiW/SiO2/Si Interfaces after Different Thermal Loading

Structure and Property of Diamond-like Carbon Coating with Si and O Co-Doping Deposited by Reactive Magnetron Sputtering

Effect of Ammonium Citrates as an Auxiliary Complexing Agent in TSV Copper Film CMP

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