1992
DOI: 10.1116/1.577723
|View full text |Cite
|
Sign up to set email alerts
|

Surface roughness analysis by scanning tunneling microscopy and atomic force microscopy

Abstract: This report demonstrates the use of scanning tunneling microscopy and atomic force microscopy to obtain surface roughness parameters for semiconductor materials. Correlation between figures of merit and physical properties such as bondability and reflectivity has been demonstrated. Eutectic bond strength for silicon die attachment is shown to be inversely proportional to the roughness of the backside of the silicon die. Reflectivity of aluminum metallization has been shown to decrease with increasing roughness… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
5
0

Year Published

1993
1993
2024
2024

Publication Types

Select...
5
2
1

Relationship

0
8

Authors

Journals

citations
Cited by 11 publications
(5 citation statements)
references
References 0 publications
0
5
0
Order By: Relevance
“…Likewise, evaporation onto substrates at a slower rate, approximately 0.5 Å/s, produced a second set of films for comparison (films 2/glass and 2/silicon ). Scanning tunneling microscopy (STM) in air revealed differences in the morphologies of the films deposited at different rates (Figure ): films 1/glass and 1/silicon had smaller average grain sizes than the corresponding samples, 2/glass and 2/silicon 1 STM images of thermally evaporated gold films grown at (a) 1/glass , (b) 1/silicon , (c) 2/glass , and (d) 2/silicon .…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Likewise, evaporation onto substrates at a slower rate, approximately 0.5 Å/s, produced a second set of films for comparison (films 2/glass and 2/silicon ). Scanning tunneling microscopy (STM) in air revealed differences in the morphologies of the films deposited at different rates (Figure ): films 1/glass and 1/silicon had smaller average grain sizes than the corresponding samples, 2/glass and 2/silicon 1 STM images of thermally evaporated gold films grown at (a) 1/glass , (b) 1/silicon , (c) 2/glass , and (d) 2/silicon .…”
Section: Resultsmentioning
confidence: 99%
“…We cannot rule out, however, that in some cases differences in the composition of the air (e.g., the concentration of ozone or other oxidants) in contact with the sample may also play a role. We assume that grain boundaries evident in the STM images correspond to defects (e.g., line defects between ordered domains) in the SAMs adsorbed at these sites, and as such, they give rise to enhanced reactivity . In addition, XRD of a gold film evaporated at the faster rate indicated the presence of more Au(100), which binds alkanethiolates less strongly than does Au(111) …”
Section: Discussionmentioning
confidence: 99%
“…164,169,170 The generation of disordered SAMs, which is a direct product of oxidation (be it in the dark or under UV irradiation), is dramatically faster on rough substrates (commonly found on directly evaporated metals) or polycrystalline substrates where the increased number of grains and grain boundaries undermine the stability of SAMs due to the varied binding strength of thiols and chemical reactivity. 171,172 B. Covalent/non-covalent thiol-free anchors…”
Section: Stabilitymentioning
confidence: 99%
“…Accurate length metrology of sub-micrometer surface features is important for a variety of technologies. Determination of grain size [ 1 ] or surface microroughness [ 2 ] and comparison of measured dimensions of organic molecules to calculated models [ 3 ] all require accuracy on the scale of nanometers or better. The Semiconductor Industry Association has identified critical dimension metrology at this scale as an important item on the path to the next generation of semiconductor electronics [ 4 ].…”
Section: Introductionmentioning
confidence: 99%