Surface roughness effect on the electrical characteristics of Pd/SiC nanocontacts

Ruffino, F.; Censabella, Maria; Piccitto, G.; Grimaldi, M. G.

doi:10.1016/j.apsusc.2020.147142

Cited by 6 publications

(3 citation statements)

References 55 publications

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“…, where Φ Pd is ≈5.2 eV and TiO2 χ is ≈4.15 eV. [41,42] The depleting characteristics are evidenced by current-voltage (I-V) test under dark condition. With the relatively smaller Pd NPs, S3 showed a much decreased current as compared with TiO x as shown in Figure 6g.…”

Section: Wwwadvopticalmatdementioning

confidence: 99%

“…[ 5 ] And according to the wok function of Pd, Φ Pd , and electron affinity of TiO 2 ,

χ_{{TiO}_{2}}

, the energy barrier Φ B can be estimated as 1.05 eV from Pd side as seen in Figure 6f according to the theoretical calculation via

{normalΦ}_{normalB} = {normalΦ}_{Pd} - χ_{{TiO}_{2}}

, where Φ Pd is ≈5.2 eV and

χ_{{TiO}_{2}}

is ≈4.15 eV. [ 41,42 ] The depleting characteristics are evidenced by current–voltage ( I – V ) test under dark condition. With the relatively smaller Pd NPs, S3 showed a much decreased current as compared with TiO x as shown in Figure 6g.…”

Section: Figurementioning

confidence: 99%

See 1 more Smart Citation

Visible Light Driven Hot‐Electron Injection by Pd Nanoparticles: Fast Response in Metal–Semiconductor Photodetection

Chen

Sui

Wang

et al. 2020

Advanced Optical Materials

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multidisciplinary research interests. For instance, based on optical design, dimer NPs can obtain the enhancement factor over 10 14[1] therefore highly beneficial to the applications such as surface enhanced Raman spectroscopy (SERS) in which the detection accuracy is approaching to single molecular level. [2] Also, the intermittent photothermal effect of Au NPs that induced by pulsed laser has been demonstrated in ultrasonic wave generation [3,4] and utilized as laser-driven liquid pump via light-mechanical energy conversion, jetting the liquid with tunable characters. Whereas, in optoelectronic research, the important role of hot-electron generation by plasmon nonradiative decay has been gradually recognized and widely investigated in metal-semiconductor system with regards of the mechanism and dynamics. [5,6] According to the transparent spectral studies, hot-electron generated by LSPR decay can inject into the conductive band of neighbor semiconductor within 200 fs, [7,8,9] and via the recently proposed direct interfacial charge transfer transition mechanism, the injection can be further speeded up to even 30 fs, [10] presenting an encouraging mechanism to be applied in ultrafast photodetection. Meanwhile, the transparent injection efficiency was reported as high as 50%, [8,11] which is quite favorable for the energy conversion applications based on semiconductors including photo detection, photocatalysis, and photovoltaics. Although the transparent studies exhibit great potentiality for optoelectronics, in the applications at steady state, the actual efficiency was observed much lower. For example, Au/ TiO x system possess an injection efficiency over 40% according to the study based on pump-probe absorption spectrum, [8] however, the Au/TiO x plasmonic nanodiode can only achieve the IPCE of less than 3% [12] in sharp comparison. One of the important dynamic inducement lies on the material electronic structure. As the free electron of Au come from s-orbit, the plasmon resonance is mainly consisted of intraband transition absorption. [13,14] However, as the amount of s-electron is relatively small, the electron export can easily induce large decrease in Fermi energy level of electrons, therefore, result in a rising energy barrier and hinder the further electron injection. [8,15,16] Also, as the hot electrons originated by Au interband absorption Hot-electron injection induced by plasmon decay enables ultrafast electron transfer in femtosecond scale and therefore endows metallic nanoparticles (MNPs) promising potentials in high-speed optoelectronics. With much higher density of states next to its Fermi level, palladium (Pd) can more efficiently launch hot electrons according to the theoretical prediction, as compared to the conventional plasmonic NPs. In this work, the optical properties of Pd NPs as well as the plasmon induced hot-electron injection are investigated through confocal Kelvin probe force microscopy. Analysis based on surface potential redistribution suggests Pd NPs can initiate dense hot-electro...

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Section: Wwwadvopticalmatdementioning

confidence: 99%

“…[ 5 ] And according to the wok function of Pd, Φ Pd , and electron affinity of TiO 2 ,

χ_{{TiO}_{2}}

, the energy barrier Φ B can be estimated as 1.05 eV from Pd side as seen in Figure 6f according to the theoretical calculation via

{normalΦ}_{normalB} = {normalΦ}_{Pd} - χ_{{TiO}_{2}}

, where Φ Pd is ≈5.2 eV and

χ_{{TiO}_{2}}

Section: Figurementioning

confidence: 99%

Visible Light Driven Hot‐Electron Injection by Pd Nanoparticles: Fast Response in Metal–Semiconductor Photodetection

Chen

Sui

Wang

et al. 2020

Advanced Optical Materials

View full text Add to dashboard Cite

show abstract

“…Especially, the interface roughness and the size of the grains are the most effective mechanisms. A high grain size will reduce grain boundary scattering, while a less rough surface will prevent large amounts of scattering caused by surface roughness [45]. Thus, as electron mobility increases, conductivity increases.…”

Section: Resultsmentioning

confidence: 99%

Enhancement of structural, optical, electrical, optoelectronic and thermoelectric properties of ZnO thin film via Ni doping and Ni-B co-doping

Üzar,

Abdulaziz,

Erbas

et al. 2024

Phys. Scr.

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In this study, the effects of nickel (Ni) and boron (B) elements on the structural, optical, electrical, optoelectronic, and thermoelectric properties of zinc oxide (ZnO) material were investigated. Therefore, undoped ZnO, 3% Ni-doped ZnO (Zn0.97Ni0.03O), and 3% Ni-1% B co-doped ZnO (Zn0.96Ni0.03B0.01O) solutions were prepared by the sol gel method. The produced solutions were coated on glass and p-type Si substrates via dip coating and spraying methods in the form of thin films. We produce pure and n-type semiconductors in the form of nanodots which have wurtzite ZnO polycrystalline structure for all samples. Ni and B co-doped sample is morphologically, electrically and optically enhanced the ZnO material with 3.08 eV band gap, homogenous surface and the highest electrical conductivity. In addition, the best material among the three samples that can be used as a visible light-sensitive sensor is Zn0.96Ni0.03B0.01O under feedback voltage. Technologically, this material can be turned into a photodiode device in the form of Au/Zn0.96Ni0.03B0.01O/p-Si. While the obtained ideality factor of ZnO from the forward bias region decreases from 5.7 to 3.4, its barrier height increases from 0.636 eV to 0.667 eV and serial resistance of contact decreases from 121.6 × 103 Ω to 5.6 × 103 Ω with Ni and B co-doping. Ni doping thin film improves the photovoltaic, and thermoelectric properties of ZnO. Ni-doped ZnO sample can be studied in form of the thin films as a thermoelectric material due to its ZT value is nearly 1.73 × 10–4 at 650 K. Its thermoelectric performance is 13 times better than the that of pure ZnO for the same temperature values. The efficiency of Ni-doped ZnO sample as solar cell increases 10 times compared to pure ZnO. In addition to the production of materials with improved energy efficiency, economical products suitable for use in large areas have been obtained in this study.

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Enhanced Performance of Self‐Powered γ‐Ray Irradiated MSM Deep UV Photodetector Based on MOCVD‐Grown ZnGa₂O₄ for Space Exploration

Khan,

Aggarwal,

Tarntair

et al. 2024

Adv Materials Technologies

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The utilization of device for the space explorations, the active material of the device must show resilience toward cosmos radiation. In this work, the radiation hardness of ZnGa2O4‐based deep ultra‐violet (DUV) photodetectors (PDs) is examined using γ‐ray irradiation. Responsivity of the photodetector at zero bias is found to improve from 0.98 to 1.94 mA W−1, the dark current increased from 0.11 to 5.6 pA, while photo‐to‐dark current ratio (PDCR) increased the from 3.2 × 103 to 3.1 × 104 and the photocurrent decay time improved from 220 to 190 ms. The high‐resolution X‐ray photoelectron spectra (HR‐XPS) of O 1s core level peak is deconvoluted into two main peaks namely, O(I) and O(II), where the lattice oxygen of ZnGa2O4 is identified by the O(I) peak, while its surface oxygen defect is represented by O(II). A clear increment is observed in the percentage of oxygen defect peak, O(II), from 6.82 to 53.19% after 200 kGy. Also, the device remains undeteriorated after 200 kGy irradiation, indicating it to be a radiation‐hard device. These characteristics allow ZnGa2O4 DUV PDs to function effectively in cosmic radiation environments with the capability to operate on zero‐bias, regardless of the γ‐radiation.

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Surface roughness effect on the electrical characteristics of Pd/SiC nanocontacts

Cited by 6 publications

References 55 publications

Visible Light Driven Hot‐Electron Injection by Pd Nanoparticles: Fast Response in Metal–Semiconductor Photodetection

Visible Light Driven Hot‐Electron Injection by Pd Nanoparticles: Fast Response in Metal–Semiconductor Photodetection

Enhancement of structural, optical, electrical, optoelectronic and thermoelectric properties of ZnO thin film via Ni doping and Ni-B co-doping

Enhanced Performance of Self‐Powered γ‐Ray Irradiated MSM Deep UV Photodetector Based on MOCVD‐Grown ZnGa₂O₄ for Space Exploration

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Surface roughness effect on the electrical characteristics of Pd/SiC nanocontacts

Cited by 6 publications

References 55 publications

Visible Light Driven Hot‐Electron Injection by Pd Nanoparticles: Fast Response in Metal–Semiconductor Photodetection

Visible Light Driven Hot‐Electron Injection by Pd Nanoparticles: Fast Response in Metal–Semiconductor Photodetection

Enhancement of structural, optical, electrical, optoelectronic and thermoelectric properties of ZnO thin film via Ni doping and Ni-B co-doping

Enhanced Performance of Self‐Powered γ‐Ray Irradiated MSM Deep UV Photodetector Based on MOCVD‐Grown ZnGa2O4 for Space Exploration

Contact Info

Product

Resources

About

Enhanced Performance of Self‐Powered γ‐Ray Irradiated MSM Deep UV Photodetector Based on MOCVD‐Grown ZnGa₂O₄ for Space Exploration