Ferroelectric random access memory is still challenging in the feature of combination of room temperature stability, non-destructive readout and high intensity storage. As a non-contact and non-destructive information readout method, surface potential has never been paid enough attention because of the unavoidable decay of the surface potential contrast between oppositely polarized domains. That is mainly due to the recombination of the surface movable charges around the domain walls. Here, by introducing a laser beam into the combination of piezoresponse force microscopy and Kelvin probe force microscopy, we demonstrate that the surface potential contrast of BiFeO 3 films can be recovered under light illumination. The recovering mechanism is understood based on the redistribution of the photo-induced charges driven by the internal electric field. Furthermore, we have created a 12-cell memory pattern based on BiFeO 3 films to show the feasibility of such photo-assisted non-volatile and non-destructive readout of the ferroelectric memory.F erroelectric materials are promising candidates for ferroelectric random access memories (FeRAMs) using their spontaneous polarization 1 , which can be switched by an external electrical field. Although FeRAMs are non-volatile and the reading/writing process can be completed within nanoseconds 2,3 , one fatal problem for conventional FeRAMs is that the reading process, which is performed by applying a bias to the ferroelectric capacitor and detecting the polarization switching current, is destructive because a rewriting process is needed. Thus, it is highly desirable to have a non-destructive readout method [4][5][6] . Polarization reversal influences the surface potential (SP) 7 which mirrors the surface charges in the polarized regions. A clear understanding of the behavior of surface charges after poling is crucial to utilizing ferroelectricity at the nanometer scale. Despite much of the work on the study of the SP of the ferroelectric materials [8][9][10][11][12] , relatively little emphasis has been placed on the readout method by measuring the non-contact SP in a ferroelectric memory, simply because the SP contrast (DSP) between oppositely polarized domains decays and fails to be kept as a memory, which is mainly due to the evolution and recombination of the movable surface charges 7,8,11,13 around the domain walls. So far, the room-temperature stability of DSP has not been succeeded, so the high density memory based on this concept faces critical challenge.By introducing a laser beam with an optical fiber into a system for piezoresponse force microscopy (PFM) and Kelvin probe force microscopy (KPFM), we demonstrate conceptually the decay issue of DSP between the oppositely polarized domains can be resolved by photo-assisted recovery. Under the sustained internal polarization field, photo-induced charges recover DSP, thus reproducing the memory readout signal in a non-destructive and non-volatile manner. Our theoretical calculations reproduce our experimental results, rev...