Surface spectroscopic studies of the deposition of TiN thin films from tetrakis-(dimethylamido)-titanium and ammonia

Abstract

The adsorption and pyrolysis of tetrakis-͑dimethylamido͒-titanium ͑TDMAT͒, Ti͓NMe 2 ͔ 4 , on several metal substrates, were studied using x-ray photoelectron spectroscopy, Auger electron spectroscopy, infrared reflection absorption spectroscopy and thermal desorption mass spectrometry. TDMAT was found to decompose readily above ϳ480 K on metallic substrates, producing TiC x N y films exhibiting a carbon-rich interface. However, in the presence of NH 3 , well below the threshold of gas-phase reactions ͑Ͻ10 Ϫ4 Torr͒, the growth of low-carbon-content ͑р8 at. %͒ titanium nitride films proceeds readily, via surface mediated reaction͑s͒ of TDMAT and NH 3 between 550 and 750 K. The effects of surface temperature and reagent pressures are reported and discussed.

Nonthermal Plasma Synthesis of Titanium Nitride Nanocrystals with Plasmon Resonances at Near-Infrared Wavelengths Relevant to Photothermal Therapy

“…Nevertheless, extensive effort was made in this study to meet the constraints on peak position, doublet separation and doublet area ratio simultaneously as much as possible. It should be noted that centering the TiN 2p 3/2 peak at around 455.85 eV, ,− near the upper limit of the possible range, produced the best fitting overall for our data, even though some studies have fitted the same peak to around 455.3 eV. ,− In addition, when the difference in the C–C binding energy between the values in this study (284.6–285.1 eV for samples produced at plasma powers at or above 75 W) and the value suggested in the detailed study on adventitious carbon contamination on TiN films (284.52 eV) is considered, the binding energy of the TiN 2p 3/2 peak is brought closer to 455.3 eV while the binding energies of other phases still fall within the possible ranges. The TiC, TiON, and TiO 2 2p 3/2 peaks are fitted to center around 455.1, − , 457.2, ,, and 458.5 eV. − …”

The Reaction of Tetrakis(dimethylamido)titanium with Self-Assembled Alkyltrichlorosilane Monolayers Possessing −OH, −NH2, and −CH3 Terminal Groups

“…Examination of the chemical shift of the Ti(2p) feature can also give clues as to the nature of the species formed on the surface. Binding energy of titanium in (physisorbed) Ti[N(CH 3 ) 2 ] 4 has been reported to be 457.5 eV, whereas that for elemental Ti and Ti bound in TiN and TiO 2 are reported to be 453.89, 455.8, and 458.7 eV, respectively . We have fit the Ti(2p) feature to two peaks using Gaussian−Lorentzian product functions, identical to the procedure used above in Figure .…”

Surface Transamination Reaction for Tetrakis(dimethylamido)titanium with NHX-Terminated Si(100) Surfaces

“…The possibility of surface transamination has been considered previously, and the reaction was observed to be hindered because of NH 3 desorption, which is a process that is favored kinetically on certain surfaces, such as titanium nitride, TiN. − This fact explains the need of temperatures in the range of 450−650 K during the ALD film growth of TiN with TDMAT and NH 3 ,,,, (notice that the growth of TiN by ALD shown in Figure is accomplished by successive transamination reactions similar to the ones shown in eqs 1 and 2). Elimination of ligands has also been explored through the reaction of metal alkylamides with a hydrogen-terminated Si(100) surface .…”