Surface state density distribution at vacuum-annealed InP(100) surface as derived from the rigorous analysis of photoluminescence efficiency

Coupled time resolved and high frequency modulated photoluminescence probing surface passivation of highly doped n-type InP samples

“…Theoretically, the comparison of the MPL experimental and calculated average intensity at high illumination fluxes could allow to perform the Photoluminescence Surface State Spectroscopy method 14,15 . Unfortunately, at such high doping level it would require more than 10 22 photons.cm -For all samples, the bulk lifetime was determined to be in the range 10-13 ns.…”

“…We also simulated a U-shaped density of states for the two samples 'Desox' and 'Reox' in accordance with the DIGS model [13][14][15] (see Supplementary Material). This kind of shape has often been found to be present on oxidized surfaces by capacitance measurements.…”

“…The SRV in InP is supposed to increase with the doping density until it is limited by the thermal velocity of carriers. In one early study, Bothra et al 9 found that an increase of doping from 3×10 15 cm -3 to 3×10 18 cm -3 caused an increase of SRV from 5000 cm/s to 1×10 6 cm/s. Other benchmarking studies using in situ photoluminescence (PL) quantum yield measurements or time resolved photo-gratings investigate InP surface states (attractive traps) and found fixed positions of the Fermi level at the surface and constant SRV for various doping densities of InP as well as several treatments of the surface [10][11][12] .…”

“…Other benchmarking studies using in situ photoluminescence (PL) quantum yield measurements or time resolved photo-gratings investigate InP surface states (attractive traps) and found fixed positions of the Fermi level at the surface and constant SRV for various doping densities of InP as well as several treatments of the surface [10][11][12] . Improvement of the PL yield technique was brought while using the Unified Disorder Induced Gap State model (DIGS) of Hasegawa postulating U-shape density of interface states [13][14][15] . Pinning of the Fermi level at about 1 eV above the valence band maximum was observed in both highly doped (10 18 cm -3 ) n and p type (100) InP surface despite the surface treatments.…”

In situ anti-oxidation treatment in GaAs MOVPE by as desorption and passivation with AlP

“…Since surface states function as nonradiative recombination centers, the PL intensity increases with the reduction in the number of surface states [8][9][10]. The PL intensities from GaAs (860 nm) after ALD are shown in Fig.…”