Surface-state dispersion of hydrogenated and hydrogen-free diamond (100) surfaces determined by angle-resolved photoemission

Diederich, L.; Aebi, Philipp; Küttel, O. M.; Maillard-Schaller, E.; Fasel, Román; Schlapbach, L.

doi:10.1016/s0039-6028(97)00699-7

Cited by 19 publications

(19 citation statements)

References 24 publications

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“…Annealing temperatures of the diamond sample were measured with a two-color pyrometer, which Adsorption of thin metallic layers ( Ti [24], TiO [25,26 ], Ni [27], Cu [27] and Co [27] and Cs [28]) was previously calibrated with a thermocouple. We annealed the diamond surfaces to temperatures on the H-free PEA diamond (100) and (111) surfaces results in the reappearance of NEA.…”

Section: Interestmentioning

confidence: 99%

“…silicon (100) surface] cases, respectively. The emission width, w, from the low-kinetic-energy cut-off Neither of the surfaces shows surface contamination ( less than 0.5 at.% of oxygen, which is the to the VBM can be used to calculate the electron affinity x by: detection limit of the technique), as shown by the MgKa XP normal emission overview spectrum x=hn−E g −w [23, 37,39], even after several weeks in air. This means that they are stable in air [38,40].…”

Section: Sample Description and Preparationmentioning

confidence: 99%

“…The (111) surface shows a (1×1) reconstruction as shown energy position determines the CBM (because E vac lies below it). The relative position of the by very-high-quality LEED patterns [19,38,39,42] and by the atomic resolution STM images as CBM with respect to E F is chosen by the position of the NEA peak with extrapolation to zero intenshown in Fig. 2 [43].…”

Section: Sample Description and Preparationmentioning

confidence: 99%

“…Therefore, a small distance at the surface between the VBM and E F . The origin of the low-kinetic-energy peak at negative bias voltage between −0.5 and −5.0 V is applied to the sample [23, 37,39,47]. This applied tions of the spectra do not change any further.…”

Section: Sample Description and Preparationmentioning

confidence: 99%

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Electron affinity and work function of differently oriented and doped diamond surfaces determined by photoelectron spectroscopy

et al. 1998

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We investigate band bending, electron affinity and work function of differently terminated, doped and oriented diamond surfaces by X-ray and ultraviolet photoelectron spectroscopy ( XPS and UPS ). The diamond surfaces were polished by a hydrogen plasma treatment and present a mean roughness below 10 Å . The hydrogen-terminated diamond surfaces have negative electron affinity (NEA), whereas the hydrogen-free surfaces present positive electron affinity (PEA). The NEA peak is only observed for the borondoped diamond (100)-(2×1):H surface, whereas it is not visible for the nitrogen-doped diamond (100)-(2×1):H surface due to strong upward band bending. For the boron-doped diamond (111)-(1×1):H surface, the NEA peak is also absent due to the conservation of the parallel wavevector component (k d ) in photoemission. Electron emission from energy levels below the conduction band minimum (CBM ) up to the vacuum level E vac allowed the electron affinity to be measured quantitatively for PEA as well as for NEA. The emission from populated surface states forms a shoulder or a peak at lower kinetic energies, depending on the NEA behavior and additionally shows a dispersion behavior. The low boron-doped diamond (100)-(2×1):H surface presents a highintensity NEA peak with a FWHM of 250 meV. Its cut-off is situated at a kinetic energy of 4.9 eV, whereas the upper limit of the vacuum level is situated at 3.9 eV, resulting in a NEA of at least −1.0 eV and a maximum work function of 3.9 eV. The high-borondoped diamond (100) surface behaves similarly, showing that the NEA peak is present due to the downward band bending independent of the boron concentration. The nitrogen-doped (100)-(2×1):H surface shows a low NEA of −0.2 eV but no NEA peak due to the strong upward band bending. The (111)-(1×1):H surface does not show a NEA peak due to the k d conservation in photoemission; E vac is situated at 4.2 eV or below, resulting in a NEA of at least −0.9 eV and a maximum work function of 4.2 eV. The high-intensity NEA peak of boron-doped diamond seems to be due to the downward band bending together with the reduced work function because of hydrogen termination. Upon hydrogen desorption at higher annealing temperatures, the work function increases, and NEA disappears. For the nitrogen-doped diamond (100) surface, the work function behaves similarly, but the observation of a NEA peak is absent because of the surface barrier formed by the high upward band bending.

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Section: Interestmentioning

confidence: 99%

Section: Sample Description and Preparationmentioning

confidence: 99%

Section: Sample Description and Preparationmentioning

confidence: 99%

Section: Sample Description and Preparationmentioning

confidence: 99%

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Electron affinity and work function of differently oriented and doped diamond surfaces determined by photoelectron spectroscopy

et al. 1998

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“…Boron is the only investigated using various experimental techniques, such as Auger electron spectroscopy [13], impurity that has been successfully doped into diamond to fabricate thin p-type CVD films for ion scattering [14], thermal desorption [15], highresolution electron energy-loss spectroscopy device applications. No shallow n-type dopants have been found, although n-type behavior of (HREELS) [16 ], X-ray and angle-resolved ultraviolet photoelectron spectroscopy ( XPS, ARUPS) diamond doped with nitrogen, phosphorus, sodium and lithium has been reported or predicted [13,[17][18][19], and X-ray photoelectron diffraction ( XPD) [20]. These surface-sensitive techniques [1].…”

Section: Introductionmentioning

confidence: 99%

Photoelectron emission from nitrogen- and boron-doped diamond (100) surfaces

et al. 1998

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The nitrogen-doped (N-doped ), type Ib, synthetic diamond (100) surface was investigated by means of X-ray photoelectron spectroscopy ( XPS) and ultraviolet photoelectron spectroscopy ( UPS ). Photoelectron emission data from the boron-doped (B-doped ) and the N-doped diamond (100) surfaces were compared and permitted the energy band diagrams for these differently terminated surfaces to be drawn. We observed emission from energy levels below the conduction band minimum up to the vacuum level and therefore succeed in evaluating the negative electron affinity (NEA) of the hydrogen-terminated diamond surfaces. Both the hydrogen-terminated N-and B-doped diamond (100) surfaces show NEA values of at least −0.2 and −1.0 eV, respectively, while the hydrogen-free surfaces show positive electron affinity. In contrast to the hydrogen-terminated B-doped (100) surface, UPS measurements on the hydrogen-terminated N-doped (100) surface do not reveal a high intensity NEA peak owing to the strong upward band bending. The high intensity NEA peak of B-doped diamond seems to be due to the downward band bending together with the reduced work function because of hydrogen termination. The work function increases for subsequent hydrogen desorption at higher annealing temperatures with associated loss of NEA. For the N-doped diamond (100) surface the work function behaves similarly but the observation of a NEA peak is absent because of the surface barrier formed by the upward band bending.

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Electronic Properties of Several (100) Surfaces and Interfaces of Boron Doped Homoepitaxial Diamond Thin Films

Muret¹,

Saby²

2002

phys. stat. sol. (a)

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Surface-state dispersion of hydrogenated and hydrogen-free diamond (100) surfaces determined by angle-resolved photoemission

Cited by 19 publications

References 24 publications

Electron affinity and work function of differently oriented and doped diamond surfaces determined by photoelectron spectroscopy

Electron affinity and work function of differently oriented and doped diamond surfaces determined by photoelectron spectroscopy

Photoelectron emission from nitrogen- and boron-doped diamond (100) surfaces

Electronic Properties of Several (100) Surfaces and Interfaces of Boron Doped Homoepitaxial Diamond Thin Films

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