Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs

Upadhyay, Bhanu B.; Takhar, Kuldeep; Jha, Jaya; Ganguly, Swaroop

doi:10.1016/j.sse.2017.11.001

Cited by 16 publications

(1 citation statement)

References 30 publications

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“…The improvement in the I ON /I OFF ratio for the oxide samples can be attributed to the significant reduction in the gate leakage current (I G ) and the high dielectric constant for Ta 2 O 5 , leading to excellent gate coupling. [35,36] This observation confirms that the detrimental effect of interface and fixed charges on the current drive of the transistor is minimal.…”

Section: Transistor Characteristicssupporting

confidence: 69%

High‐Performance GaN HEMTs with I_ON/I_OFF ≈10¹⁰ and Gate Leakage Current <10⁻¹¹ A mm⁻¹ Using Ta₂O₅ Dielectric

Upadhyay

Surapaneni

Yadav

et al. 2022

Physica Status Solidi (a)

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Herein, Ta2O5 high‐k gate dielectric‐based GaN high electron‐mobility transistors (HEMTs) with a high I ON/I OFF ratio and low gate leakage current are demonstrated without any significant deterioration of the other performance parameters. Ta2O5 with an average surface roughness of 1.8 nm and a dielectric constant of ≈26 are grown by sputtering and annealing in O2. The bandgap, valence, and conduction band offsets with Al0.3Ga0.7 N are 4.85, 0.24, and 0.61 eV, respectively. The reverse gate leakage current at −7 V is observed to be 1.2 ×10−10 A mm−1 for 5 nm and <1.0×10−11 A mm−1 for 20 and 30 nm oxide thickness compared to 5.0 × 10−6 A mm−1 for the control sample. This current is among the lowest ever reported for GaN‐based oxide‐HEMTs without significantly sacrificing other performances. The I ON/I OFF ratio is 2 × 109, 7 × 109, and 1 × 10 for 5, 20, and 30 nm oxide thickness, respectively, as compared to 2 × 108 for the control sample. The interface–state–density is estimated to be 1.5 × 1013 cm−2 eV−1. I DS,sat is measured to be 710, 700, and 690 mA mm−1 for 5, 20, and 30 nm Ta2O5 thickness, respectively, compared to 725 mA mm−1 for the control sample. The presence of oxide does not change the other characteristics much.

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Section: Transistor Characteristicssupporting

confidence: 69%

High‐Performance GaN HEMTs with I_ON/I_OFF ≈10¹⁰ and Gate Leakage Current <10⁻¹¹ A mm⁻¹ Using Ta₂O₅ Dielectric

Upadhyay

Surapaneni

Yadav

et al. 2022

Physica Status Solidi (a)

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Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs

Takhar

Upadhyay

Yadav

et al. 2019

Applied Surface Science

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Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment

Zhu,

Zhang,

et al. 2024

Microelectronics Journal

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Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs

Cited by 16 publications

References 30 publications

High‐Performance GaN HEMTs with I_ON/I_OFF ≈10¹⁰ and Gate Leakage Current <10⁻¹¹ A mm⁻¹ Using Ta₂O₅ Dielectric

High‐Performance GaN HEMTs with I_ON/I_OFF ≈10¹⁰ and Gate Leakage Current <10⁻¹¹ A mm⁻¹ Using Ta₂O₅ Dielectric

Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs

Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment

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Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs

Cited by 16 publications

References 30 publications

High‐Performance GaN HEMTs with ION/IOFF ≈1010 and Gate Leakage Current <10−11 A mm−1 Using Ta2O5 Dielectric

High‐Performance GaN HEMTs with ION/IOFF ≈1010 and Gate Leakage Current <10−11 A mm−1 Using Ta2O5 Dielectric

Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs

Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment

Contact Info

Product

Resources

About

High‐Performance GaN HEMTs with I_ON/I_OFF ≈10¹⁰ and Gate Leakage Current <10⁻¹¹ A mm⁻¹ Using Ta₂O₅ Dielectric

High‐Performance GaN HEMTs with I_ON/I_OFF ≈10¹⁰ and Gate Leakage Current <10⁻¹¹ A mm⁻¹ Using Ta₂O₅ Dielectric