Surface structure and thermal desorption spectroscopy in Si(111)

Bartha, Johann W.; Barjenbruch, U.; Henzler, M.

doi:10.1088/0022-3719/19/14/012

Cited by 11 publications

(6 citation statements)

References 22 publications

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“…As indicated in the respective spectrum (Fig. 3) for the free-standing rubrene film the maximum in the desorption appears around 130 °C showing a sharp drop according to a zero order desorption process [14]. In contrast, for the SiOx-capped layer desorption starts at around 285 °C, the onset is thus shifted by more than 150 °C.…”

Section: Recrystallization Of Rubrene Layersmentioning

confidence: 85%

Thermally and seed‐layer induced crystallization in rubrene thin films

Nothaft

Pflaum

2008

Physica Status Solidi (b)

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We have analyzed the tendency of crystallization and the thermal activation of ordering processes in rubrene thin films. As we will demonstrate, a crystalline phase with a unit cell in agreement to the bulk structure can be stabilized upon heating of amorphous rubrene layers previously capped by a sputtered SiOx layer. This encapsulation significantly enhances the thermal stability of the organic film by about 150 °C. We compared this approach with crystallization initiated by the presence of a pentacene seed layer during rubrene deposition. Thin film transistors prepared by this route showed hole mobilities of 0.01 cm2/Vs which are four orders of magnitude higher than for their amorphous counterparts. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Recrystallization Of Rubrene Layersmentioning

confidence: 85%

Thermally and seed‐layer induced crystallization in rubrene thin films

Nothaft

Pflaum

2008

Physica Status Solidi (b)

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“…W26%Re/W5%Re thermocouple wires were inserted in this tube to prevent direct contact of the thermocouple material to the sample surface and Mitchell et al In addition, the measured EMF was calibrated by the desorption temperature of the multilayer Xe (73 K) and multilayer water ice (155 K) . The sample was cooled at 90 K by liquid nitrogen, at 58 K by liquid helium, and at 79 K by solid nitrogen.…”

Section: Methodsmentioning

confidence: 99%

The Precursor Mediated Chemisorption of Vinyl Bromide on Si(100)c(4×2)

et al. 2004

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We investigated the adsorption states and the reaction of vinyl bromide (CH2=CHBr) on Si(100)c(4×2), using high-resolution electron energy loss spectroscopy. We found that the chemisorption of this molecule occurs via a precursor state and a vinyl bromide molecule is di-σ bonded to the Si dimer on Si(100)c(4×2) in the chemisorption state. The precursor species are observed in the temperature range from 58 to 90 K. Judging from the vibrational spectra, we conclude that the structure of the precursor state is a three-atom intermediate state (π complex). The activation energy and the preexponential factor of the reaction from the precursor state to the chemisorption state are estimated to be 27.3 kJ/mol (283 meV) and 1.5 × 1013 s-1, respectively. The activation energy decreases with increasing the vinyl bromide coverage owing to the steric repulsion.

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“…In the previous thermal desorption spectroscopy ͑TDS͒ measurement of Xe/Si(111)-7ϫ7, several different adsorption states with different desorption energies were observed, five peaks at ϳ67 K ͑D͒, ϳ80 K (CЈ), ϳ87 K ͑C͒, ϳ93 K ͑B͒, and ϳ97 K ͑A͒. 10 The peak at ϳ67 K ͑D͒ with the lowest energy was attributed to the multilayer adsorbates. The ratio of the two major peaks at ϳ80 K (CЈ) and ϳ87 K ͑C͒ was 1:1 and the amount of the other two peaks was much smaller.…”

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confidence: 95%

Characteristic adsorption ofXeon aSi(111)−(7×7)surface at low temperature

Takeuchi

Futaba

et al. 2002

Phys. Rev. B

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Site-dependent adsorption structures of Xe atoms on a Si(111)-7ϫ7 surface were studied by scanning tunneling microscopy at 8 K. Xe atoms initially adsorb as dimers on the site between a rest atom and its two neighboring center adatoms, and then near the corner adatom site. Similar structures were formed at both the faulted half ͑FH͒ and the unfaulted half ͑UH͒ of the 7ϫ7 unit. The observed structure is in excellent agreement with that estimated by the rigid ball model, however, site-dependent bias dependence and different stabilities were observed for them, indicating the existence of different interactions between Xe and Si atoms in the 7 ϫ7 unit despite the stable electronic structure of Xe. Based on the results with thermal desorption spectroscopy, the adsorption energies are estimated to be 200 and 220 meV for FH and UH units, respectively.

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Surface structure and thermal desorption spectroscopy in Si(111)

Cited by 11 publications

References 22 publications

Thermally and seed‐layer induced crystallization in rubrene thin films

Thermally and seed‐layer induced crystallization in rubrene thin films

The Precursor Mediated Chemisorption of Vinyl Bromide on Si(100)c(4×2)

Characteristic adsorption ofXeon aSi(111)−(7×7)surface at low temperature

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