The surface structure and vibrational dynamics of CH 3 -Si͑111͒ and CD 3 -Si͑111͒ surfaces were measured using helium atom scattering. The elastic diffraction patterns exhibited a lattice constant of 3.82 Å, in accordance with the spacing of the silicon underlayer. The excellent quality of the observed diffraction patterns, along with minimal diffuse background, indicated a high degree of long-range ordering and a low defect density for this interface. The vibrational dynamics were investigated by measurement of the Debye-Waller attenuation of the elastic diffraction peaks as the surface temperature was increased. The angular dependence of the specular ͑ i = f ͒ decay revealed perpendicular mean-square displacements of 1.0ϫ 10 −5 Å 2 K −1 for the CH 3 -Si͑111͒ surface and 1.2ϫ 10 −5 Å 2 K −1 for the CD 3 -Si͑111͒ surface, and a He-surface attractive well depth of ϳ7 meV. The effective surface Debye temperatures were calculated to be 983 K for the CH 3 -Si͑111͒ surface and 824 K for the CD 3 -Si͑111͒ surface. These relatively large Debye temperatures suggest that collisional energy accommodation at the surface occurs primarily through the Si-C local molecular modes. The parallel mean-square displacements were 7.1ϫ 10 −4 and 7.2ϫ 10 −4 Å 2 K −1 for the CH 3 -Si͑111͒ and CD 3 -Si͑111͒ surfaces, respectively. The observed increase in thermal motion is consistent with the interaction between the helium atoms and Si-CH 3 bending modes. These experiments have thus yielded detailed information on the dynamical properties of these robust and technologically interesting semiconductor interfaces.