Surface termination of the NdGaO3(110)

Dirsyte, R.; Schwarzkopf, Jutta; Wagner, G.; Lienemann, J.; Busch, M.; Winter, H.; Fornari, R.

doi:10.1016/j.apsusc.2009.06.052

Cited by 17 publications

(9 citation statements)

References 21 publications

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“…substrates. The NdGaO 3 substrates are slightly off-oriented (0.1 • ) and annealed in pure oxygen flow at 1050 • C for 1 h. This generates a regular step-and-terrace surface structure with NdO surface termination [30] and promotes step flow growth of the NaNbO 3 film. A detailed description of the MOCVD deposition technique and the deposition parameters are given in Ref.…”

Section: Introductionmentioning

confidence: 99%

Electronic characterization of polar nanoregions in relaxor-type ferroelectricNaNbO3films

et al. 2016

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Section: Introductionmentioning

confidence: 99%

Electronic characterization of polar nanoregions in relaxor-type ferroelectricNaNbO3films

et al. 2016

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“…Thermal processes to achieve A-site terminated surfaces are otherwise more controversial and have resulted in different experimental conclusions. [14][15][16][17][18][19] Onishi et al achieved a fully NdO-terminated surface aer treating an NGO single crystal for 2 h at 1000 C in air (coaxial impactcollision ion scattering spectroscopy CAISISS). 14 Radovic et al instead had to increase temperature up to 1200 C for 20 h in oxygen ux to obtain the same result (grazing X-ray Photoelectron Spectroscopy XPS).…”

Section: Introductionmentioning

confidence: 99%

Controlling the surface termination of NdGaO3 (110): the role of the gas atmosphere

et al. 2014

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In this work the effect of gas atmosphere on the surface termination reconstruction of single crystal NdGaO3 (110) (NGO) during thermal annealing was analyzed. Using Low Energy Ion Scattering (LEIS) it has been possible to study the chemical composition of the first atomic layer of treated NGO single crystal samples. NGO has been analyzed both as-received and after a specific thermal treatment at 1000 °C under different gas fluxes (argon, nitrogen, static air, synthetic air, nitrogen plus 5% hydrogen and wet synthetic air respectively). Thermal annealing of perovskite single crystals, as already reported in the literature, is used to obtain a fully A-cation surface termination. Nevertheless the effect of the gas-atmosphere on this process has not been previously reported. By the use of sequential low energy Ar(+) sputtering combined with the primary ion LEIS analysis, the reconstruction of the outermost atomic layers has allowed the clarification of the mechanism of NGO neodymium surface enrichment. It is proposed that the gallium at the surface is submitted to a reduction/evaporation mechanism caused by low oxygen partial pressure and/or high water pressure in the vector gas. Below the first surface atomic layers of an as-received NGO single-crystal a gallium-rich phase has also been observed.

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“…Before introducing the perovskite substrates into the reactor chamber, they were annealed in pure oxygen gas flow at 1050 C for NdGaO 3 , GdScO 3 , and DyScO 3 and at 1150 C for TbScO 3 in order to generate a regular step-andterrace surface structure with $200 nm broad atomically smooth terraces and step heights of one monolayer ($4 Å ). 31,32 All NaNbO 3 films with thickness ranging from $10 nm to 140 nm were deposited at a substrate temperature of 700 C and an O 2 to Ar ratio in the gas phase of 0.63 at a gas pressure of 2.6 Â 10 3 Pa. The Na(thd) ((thd) ¼ 2,2,6,6-tetramethyl-3, 5-heptanedione) and Nb(EtO) 5 ((EtO) 5 ¼ penta-ethoxide) metal-organic precursors dissolved in dry toluene with a concentration of 0.01 M were evaporated at 230 C and 190 C, respectively, and transported by Ar as carrier gas into the reactor chamber via a showerhead.…”

Section: Experimental Film Deposition and Characterizationmentioning

confidence: 99%

Ferroelectric domain structure of anisotropically strained NaNbO3 epitaxial thin films

Schwarzkopf

Braun

Schmidbauer

et al. 2014

Journal of Applied Physics

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NaNbO3 thin films have been grown under anisotropic biaxial strain on several oxide substrates by liquid-delivery spin metalorganic chemical vapor deposition. Compressive lattice strain of different magnitude, induced by the deposition of NaNbO3 films with varying film thickness on NdGaO3 single crystalline substrates, leads to modifications of film orientation and phase symmetry, which are similar to the phase transitions in Pb-containing oxides near the morphotropic phase boundary. Piezoresponse force microscopy measurements exhibit large out-of-plane polarization components, but no distinctive domain structure, while C-V measurements indicate relaxor properties in these films. When tensile strain is provoked by the epitaxial growth on DyScO3, TbScO3, and GdScO3 single crystalline substrates, NaNbO3 films behave rather like a normal ferroelectric. The application of these rare-earth scandate substrates yields well-ordered ferroelectric stripe domains of the type a1/a2 with coherent domain walls aligned along the [001] substrate direction as long as the films are fully strained. With increasing plastic lattice relaxation, initially, a 2D domain pattern with still exclusively in-plane electric polarization, and finally, domains with in-plane and out-of-plane polar components evolve.

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Surface termination of the NdGaO3(110)

Cited by 17 publications

References 21 publications

Electronic characterization of polar nanoregions in relaxor-type ferroelectricNaNbO3films

Electronic characterization of polar nanoregions in relaxor-type ferroelectricNaNbO3films

Controlling the surface termination of NdGaO3 (110): the role of the gas atmosphere

Ferroelectric domain structure of anisotropically strained NaNbO3 epitaxial thin films

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