Surface topology caused by dislocations in polar, semipolar, and nonpolar InGaN/GaN heterostructures

Schade, Lukas; Wernicke, Tim; Raß, Jens; Ploch, Simon; Weyers, M.; Kneissl, Michael; Schwarz, Ulrich

doi:10.1002/pssa.201300448

Cited by 4 publications

(3 citation statements)

References 16 publications

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“…The same shape was reported on semipolar and nonpolar InGaN and GaN. 30) The density of the arrowhead structures was not affected by increasing the InGaN thickness, and a two-to three-dimensioned growth mode transition did not occur, although the film thickness exceeded the critical thickness, as reported in a ð11…”

Section: Growth Time Dependencesupporting

confidence: 72%

Growth of semipolar high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001)

Kushimoto

Honda

Amano

2016

Jpn. J. Appl. Phys.

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Low-toxity high-In-content InGaN is an attractive option for short-distance communications through plastic optical fibers because its performance is only slightly affected by temperature. However, its fabrication on the c-plane is impaired by In droplets and V pits, which form at low-growth temperature. On the other hand, unlike the c-plane, InGaN relaxes with tilting. Therefore, in this study, we first grew a high-In-content InGaN single layer, and then we fabricated an InGaN tilting layer between InGaN-based multiple quantum wells (MQWs) and GaN stripes/(001)Si. The emission wavelength increased with the InGaN tilting layer’s growth time because the strain was relaxed by misfit dislocations at the heterointerface. This layer also extended the emission peak of InGaN/GaN MQWs and increased the photoluminescence intensity with respect to that of a single-layered InGaN. Therefore, the InGaN tilting layer is effective for growing high-In-content InGaN MQWs.

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Section: Growth Time Dependencesupporting

confidence: 72%

Growth of semipolar high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001)

Kushimoto

Honda

Amano

2016

Jpn. J. Appl. Phys.

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“…When growth is on the (10 11) plane, they exhibit the observed triangular-based pyramid structure. 41 The line features running parallel to the 1 210 ½ direction (vertical in Fig. 5) are identified from the literature as most likely to be misfit dislocations introduced by glide in the basal (0001) planes at the interfaces of the MQW structure.…”

Section: Resultsmentioning

confidence: 98%

Luminescence behavior of semipolar (101¯1) InGaN/GaN “bow-tie” structures on patterned Si substrates

Bruckbauer

Trager-Cowan

Hourahine

et al. 2020

Journal of Applied Physics

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In this work, we report on the innovative growth of semipolar "bow-tie"-shaped GaN structures containing InGaN/GaN multiple quantum wells (MQWs) and their structural and luminescence characterization. We investigate the impact of growth on patterned (113) Si substrates, which results in the bow-tie cross section with upper surfaces having the (10 11) orientation. Room temperature cathodoluminescence (CL) hyperspectral imaging reveals two types of extended defects: black spots appearing in intensity images of the GaN near band edge emission and dark lines running parallel in the direction of the Si stripes in MQW intensity images. Electron channeling contrast imaging (ECCI) identifies the black spots as threading dislocations propagating to the inclined (10 11) surfaces. Line defects in ECCI, propagating in the [1 210] direction parallel to the Si stripes, are attributed to misfit dislocations (MDs) introduced by glide in the basal (0001) planes at the interfaces of the MQW structure. Identification of these line defects as MDs within the MQWs is only possible because they are revealed as dark lines in the MQW CL intensity images, but not in the GaN intensity images. Low temperature CL spectra exhibit additional emission lines at energies below the GaN bound exciton emission line. These emission lines only appear at the edge or the center of the structures where two (0001) growth fronts meet and coalesce (join of the bow-tie). They are most likely related to basal-plane or prismatic stacking faults or partial dislocations at the GaN/Si interface and the coalescence region.

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“…The ECCI micrograph also shows atomic steps around the hillocks. This hillock morphology is a result of spiral growth around the screw component dislocations [73][74][75].…”

Section: Resultsmentioning

confidence: 99%

Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

Trager-Cowan

Alasmari

Avis

et al. 2020

Semicond. Sci. Technol.

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The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging (ECCI) and cathodoluminescence (CL) hyperspectral imaging provide complementary information on the structural and luminescence properties of materials rapidly and non-destructively, with a spatial resolution of tens of nanometres. EBSD provides crystal orientation, crystal phase and strain analysis, whilst ECCI is used to determine the planar distribution of extended defects over a large area of a given sample. CL reveals the influence of crystal structure, composition and strain on intrinsic luminescence and/or reveals defect-related luminescence. Dark features are also observed in CL images where carrier recombination at defects is non-radiative. The combination of these techniques is a powerful approach to clarifying the role of crystallography and extended defects on a material’s light emission properties. Here we describe the EBSD, ECCI and CL techniques and illustrate their use for investigating the structural and light emitting properties of UV-emitting nitride semiconductor structures. We discuss our investigations of the type, density and distribution of defects in GaN, AlN and AlGaN thin films and also discuss the determination of the polarity of GaN nanowires.

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Surface topology caused by dislocations in polar, semipolar, and nonpolar InGaN/GaN heterostructures

Cited by 4 publications

References 16 publications

Growth of semipolar high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001)

Growth of semipolar high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001)

Luminescence behavior of semipolar (101¯1) InGaN/GaN “bow-tie” structures on patterned Si substrates

Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

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