Surface Tracks and Cratering in Polymers

Papaléo, R.M.

doi:10.1007/978-3-662-07326-1_6

Cited by 5 publications

(5 citation statements)

References 84 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The maximum size of the etchable track occurs below the stopping power maximum, this being a characteristic found in many different phenomena related to ion-solid interactions because of the so-called velocity effect. [28][29][30][31] For high velocities, despite the further increase in S e , there is an effective decrease in the energy density deposited initially in the tracks due to the higher energy of emitted secondary electrons. For the Au data, this effect is evident for velocities larger than 0.45 MeV/ u ͑ϳ90 MeV͒.…”

Section: A Thresholdsmentioning

confidence: 99%

Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability

Dallanora

Marcondes

Bermúdez

et al. 2008

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Vitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au ions with energies from 0.005 to 11.1 MeV/u and by ions at constant velocity (0.1 MeV/u A197u, T130e, A75s, S32, and F19). Subsequent chemical etching produced conical holes in the films with apertures from a few tens to ∼150 nm. The diameter and the cone angle of the holes were determined as a function of energy loss of the ions. Preferential track etching requires a critical electronic stopping power Seth∼2 keV/nm, independent of the value of the nuclear stopping. However, homogeneous etching, characterized by small cone opening angles and narrow distributions of pore sizes and associated with a continuous trail of critical damage, is only reached for Se>4 keV/nm. The evolution of the etched-track dimensions as a function of specific energy (or electronic stopping force) can be described by the inelastic thermal spike model, assuming that the etchable track results from the quenching of a zone which contains sufficient energy for melting. The model correctly predicts the threshold for the appearance of track etching Seth if the radius of the molten region has at least 1.6 nm. Homogeneous etching comes out only for latent track radii larger than 3 nm.

show abstract

Section: A Thresholdsmentioning

confidence: 99%

Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability

Dallanora

Marcondes

Bermúdez

et al. 2008

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…Figure 1 show a series of SMF images of PMMA films bombarded by 20 MeV Au ions. For the thick films, two different structures at the impact site are observed, an elliptical crater hole and an elongated hillock or tail extending along the direction of ion penetration, as usually seen for polymers [4]. For thicknesses around and below 16 nm, changes in the size of the impact features, particularly in the hillock volume and the crater depth, start to occur.…”

mentioning

confidence: 67%

“…1 Introduction It has been known since many years that the interaction of an energetic ion with insulators causes the ejection of material and plastic deformation at the surface, resulting in permanent hillocks and craters [1][2][3][4]. These effects are due to energy transfer from electronic excitations along the trajectory of the projectile.…”

mentioning

confidence: 99%

Surface tracks on ultra‐thin polymer films

Thomaz

Barbosa

Silva

et al. 2013

Phys. Status Solidi C

Self Cite

View full text Add to dashboard Cite

show abstract

“…However, the effect of using probes of different tip radii was checked by comparing images (and quantitative data derived from such images) obtained with standard Si tips (Budget Sensors, Innovative Solutions Bulgaria Ltd., Sofia, Bulgaria) with super sharp tips (Applied NanoStructures Inc., Mountain View, CA, USA) that have, nominally, a factor of four smaller tip radius (∼2 nm). A detailed discussion of the influence of the tip on the metrology of surface tracks can be found elsewhere [7].…”

Section: Sfm Measurementsmentioning

confidence: 99%

“…In particular, for individual fast heavy ions, a trail of modified material is produced along the material (the latent track), which can subsequently be developed into pores of different shapes [3]. At the surface, nanometersized craters or protusions may be directly produced as a result of an ion impact, modifying locally its topography and its physico-chemical structure [4][5][6][7][8]. Patterning of surfaces for nanofabrication of devices [9,10] is one of the most prominent applications.…”

Section: Introductionmentioning

confidence: 99%

Impact Features Induced by Single Fast Ions of Different Charge-State on Muscovite Mica

Alencar

Silva

Leal

et al. 2021

Atoms

View full text Add to dashboard Cite

The influence of the charge state q on surface modifications induced by the impact of individual fast, heavy ions on muscovite mica was investigated. Beams of 593 MeV 197Auq+ with well-defined initial charge states over a relatively broad range of values (30 to 51) and at different irradiation geometries were used. At normal incidence, the impact features are rounded protrusions (hillocks) with ≳20 nm in diameter. At grazing angles, besides the hillocks, craters and elongated tails (up to 350 nm-long) extending along the direction of ion penetration are produced. It is shown that the impact features at normal incidence depend strongly on the initial charge state of the projectiles. This dependence is very weak at grazing angles as the ion reaches the equilibrium charge state closer to the surface. At normal ion incidence, the hillock volume scales with q3.3±0.6. This dependence stems largely from the increase in the hillock height, as a weak dependence of the diameter was observed.

show abstract

Surface Tracks and Cratering in Polymers

Cited by 5 publications

References 84 publications

Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability

Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability

Surface tracks on ultra‐thin polymer films

Impact Features Induced by Single Fast Ions of Different Charge-State on Muscovite Mica

Contact Info

Product

Resources

About